Title:
MULTI-LAYER COMPOSITE SEMICONDUCTOR SUBSTRATE STRUCTURE AND METHOD FOR PREPARING SAME
Document Type and Number:
WIPO Patent Application WO/2020/019312
Kind Code:
A1
Abstract:
Disclosed are a multi-layer composite semiconductor substrate structure and a method for preparing same. The structure comprises: a high-heat-conductivity material layer, a bonding interface layer, a dielectric material layer, a device functional layer and a support substrate, wherein the bonding interface layer is formed between the high-heat-conductivity material layer and the dielectric material layer, and the high-heat-conductivity material layer is bonded with the dielectric material layer by means of the bonding interface layer; and the dielectric material layer is formed above the device functional layer supported by the support substrate. The preparation method is a low-temperature process, in which a growth start face of the high-heat-conductivity material layer is bonded with the dielectric material layer, or a growth stop face of the high-heat-conductivity material layer is bonded with the dielectric material layer. According to the multi-layer composite semiconductor substrate structure and the method for preparing same in the present disclosure, the heat dissipation effect of a device is improved, the problem of the device functional layer being subjected to thermal damage and stress as a result of a direct high-temperature deposition process of the high-heat-conductivity material layer is avoided, and material costs and grinding processing costs are saved on.
Inventors:
MU FENGWEN (CN)
SUGA TADATOMO (CN)
SUGA TADATOMO (CN)
Application Number:
PCT/CN2018/097478
Publication Date:
January 30, 2020
Filing Date:
July 27, 2018
Export Citation:
Assignee:
INTERNATIONAL ECODESIGN AND MICROELECTRONIC PACKAGING RES INSTITUTE LIMITED (CN)
International Classes:
H01L23/36; H01B3/04
Foreign References:
| CN107077917A | 2017-08-18 | |||
| CN101524902A | 2009-09-09 | |||
| CN104981503A | 2015-10-14 | |||
| US9722011B2 | 2017-08-01 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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