Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MULTILAYER DIELECTRIC STACK FOR DAMASCENE TOP-VIA INTEGRATION
Document Type and Number:
WIPO Patent Application WO/2023/024993
Kind Code:
A1
Abstract:
A back-end-of-line (BEOL) component includes a substrate (204) and a first layer of dielectric material (212) arranged on the substrate (204). The first layer of dielectric material (212) includes openings (240). The BEOL component further includes a first layer of metal material (248) arranged in the openings (240). The BEOL component further includes an etch stop layer (216) arranged on top of the first layer of dielectric material (212). The BEOL component further includes a second layer of metal material (264) in direct contact with the first layer of metal material (212). The second layer of metal material (264) includes at least one projection (268) extending above the etch stop layer (216). The BEOL component further includes a second layer of dielectric material (272) arranged on top of the etch stop layer (216) and surrounding the at least one projection (268).

Inventors:
MUKESH SAGARIKA (US)
GRANT DEVIKA SARKAR (US)
LIE FEE LI (US)
MATHAM SHRAVAN KUMAR (US)
SHOBHA HOSADURGA (US)
KARVE GAURI (US)
Application Number:
PCT/CN2022/112955
Publication Date:
March 02, 2023
Filing Date:
August 17, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
International Classes:
H01L23/532; H01L21/768; H01L23/48
Foreign References:
CN102044525A2011-05-04
CN102074498A2011-05-25
CN105448814A2016-03-30
CN112309955A2021-02-02
US20020192937A12002-12-19
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
Download PDF: