MULTILAYER STRUCTURE AND GALLIUM-NITRIDE-BASED SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/074374

A1

A multilayer structure comprising an amorphous substrate, a buffer layered formed on the amorphous substrate, and one or more gallium-nitride-based semiconductor layers formed on the buffer layer, wherein the gallium-nitride-based semiconductor layers include at least one gallium nitride layer, the gallium nitride layer having an oxygen concentration of 1×1021 /cm3 or less. The gallium nitride layer has a carbon concentration of 3×1019 /cm3 or less, a hydrogen concentration of 2×1020 /cm3 or less, and a fluorine concentration of 5×1017 /cm3 or less.

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NISHIMURA MASUMI (JP)
TSUBUKU MASASHI (JP)
UEOKA YOSHIHIRO (JP)
SUEMOTO YUYA (JP)
MESUDA MASAMI (JP)

PCT/JP2022/038069

May 04, 2023

October 12, 2022

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JAPAN DISPLAY INC (JP)
TOSOH CORP (JP)

H01L21/20; C23C14/06; H01L21/203; H01L21/336; H01L29/41; H01L29/417; H01L29/78; H01L29/786; H01L33/16; H01L33/32

WO2020075599A1

2020-04-16

JP2012119569A	2012-06-21
JP2008306114A	2008-12-18
JP2013212978A	2013-10-17
JP2021163900A	2021-10-11
JP2018046277A	2018-03-22

TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)

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