MULTILAYER STRUCTURE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2010/137448

A1

Provided is a multilayer structure which does not easily generate dielectric breakdown and has a high dielectric constant and high qualities. A method for manufacturing the multilayer structure is also provided. The multilayer structure has a dielectric layer (3) between a first conductive layer (1) and a second conductive layer (2), and the dielectric layer (3) is composed of a dielectric film (31) formed on the first conductive layer (1), and a dielectric fine particle film (32) which is formed by applying a dispersion solution, which contains dielectric fine particles, on the dielectric film (31). The method for manufacturing the multilayer structure has a dielectric layer forming step wherein the dielectric layer (3) is formed on the first conductive layer (1), and a conductive layer forming step wherein the second conductive layer (2) is formed on the dielectric layer (3). The dielectric layer forming step is composed of a dielectric film forming step wherein the dielectric film (31) is formed on the first conductive layer (1), and a fine particle film forming step wherein the dielectric fine particle film (32) is formed by applying the dispersion solution, which contains the dielectric fine particles, on the dielectric film (31).

NOGUCHI HITOSHI (JP)
TANAKA NAOKI (JP)
NAKAMURA TATSUYA (JP)

PCT/JP2010/057817

December 02, 2010

May 07, 2010

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SANYO ELECTRIC CO (JP)
NOGUCHI HITOSHI (JP)
TANAKA NAOKI (JP)
NAKAMURA TATSUYA (JP)

H01G4/12; B32B7/02; B32B9/00; H01G4/33; H01G13/00

WO2006118237A1

2006-11-09

JP2004047705A	2004-02-12
JP2007258643A	2007-10-04
JP2006339420A	2006-12-14

Hiroshi Sumiya (JP)
KADOYA HIROSHI (JP)

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