Title:
N-TYPE BISMUTH TELLURIDE-BASED THERMOELECTRIC MATERIAL HAVING MODULATION STRUCTURE, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/204162
Kind Code:
A1
Abstract:
An n-type bismuth telluride-based thermoelectric material having a modulation structure, and a preparation method therefor. The material comprises mixed powder of n-type Bi2Te3 and Bi2Te3-xSex in an equimolar ratio, wherein x is greater than or equal to 0.1 and less than or equal to 0.9. The internal structure of crystal atoms of the n-type bismuth telluride-based thermoelectric material having a modulation structure is the modulation structure; the purity of Bi2Te3 powder is greater than or equal to 99.99 wt%, and the particle size of the Bi2Te3 powder is smaller than or equal to 500 μm; and the purity of Bi2Te3-xSex powder is greater than or equal to 99.99 wt%, the particle size of the Bi2Te3-x>Se powder is less than or equal to 500 μm, and x is greater than or equal to 0.1 and less than or equal to 0.9.
Inventors:
LIU FENGMING (CN)
Application Number:
PCT/CN2021/085829
Publication Date:
October 14, 2021
Filing Date:
April 07, 2021
Export Citation:
Assignee:
SHENZHEN JIANJU SCIENCE AND TECH LTD (CN)
International Classes:
C04B35/547
Domestic Patent References:
| WO2007047928A2 | 2007-04-26 |
Foreign References:
| CN111454060A | 2020-07-28 | |||
| CN1546369A | 2004-11-17 | |||
| CN1974079A | 2007-06-06 |
Attorney, Agent or Firm:
BEIJING DONGFANG SHENGFAN IP AGENT FIRM GP (CN)
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