Title:
N-TYPE SILICON BLOCK AND N-TYPE SILICON SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/053092
Kind Code:
A1
Abstract:
This n-type silicon block contains a donor which is a group-15 element, an acceptor which is a group-13 element, carbon, and oxygen, and includes a first region in which the number of carbon atoms per unit volume is greater than the number of oxygen atoms per unit volume. In the n-type silicon block, the number of donor atoms per unit volume is greater than the number of acceptor atoms per unit volume. The segregation coefficient of the donor with respect to silicon is greater than the segregation coefficient of the acceptor with respect to silicon. Further, this n-type silicon substrate contains a donor which is a group-15 element, and an acceptor which is a group-13 element, carbon, and oxygen. In the n-type silicon substrate, the number of donor atoms per unit volume is greater than the number of acceptor atoms per unit volume, and the number of carbon atoms per unit volume is greater than the number of oxygen atoms per unit volume. The segregation coefficient of the donor with respect to silicon is greater than the segregation coefficient of the acceptor with respect to silicon.
Inventors:
MATSUO HITOSHI (JP)
TANABE HIDEYOSHI (JP)
TANABE HIDEYOSHI (JP)
Application Number:
PCT/JP2022/033900
Publication Date:
March 14, 2024
Filing Date:
September 09, 2022
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
C30B29/06; C30B11/02; C30B28/06
Domestic Patent References:
| WO2006093099A1 | 2006-09-08 | |||
| WO2020017360A1 | 2020-01-23 |
Foreign References:
| JP2011517106A | 2011-05-26 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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