Title:
NON-POLAR OR SEMI-POLAR GaN WAFER
Document Type and Number:
WIPO Patent Application WO/2017/010166
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a non-polar or semi-polar GaN wafer in which the width of a reduced-crystallinity band present in a main surface is narrowed. Provided is a GaN wafer comprising a first main surface and a second main surface on the side opposite the first main surface, the first main surface being parallel or inclined with respect to the M plane. If such an inclination is present and the inclination is broken down into an a-axis component and a c-axis component, the absolute value of the a-axis component is 5° or less and the absolute value of the c-axis component is 45° or less. The GaN wafer has, on the first main surface thereof, reduced-crystallinity bands extending in a direction perpendicular to the c axis, and the width of the reduced-crystallinity band is less than 190 µm.
Inventors:
TSUKADA YUSUKE (JP)
TASHIRO MASAYUKI (JP)
NAMITA HIDEO (JP)
TASHIRO MASAYUKI (JP)
NAMITA HIDEO (JP)
Application Number:
PCT/JP2016/064969
Publication Date:
January 19, 2017
Filing Date:
May 20, 2016
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
International Classes:
C30B29/38; H01L21/205
Domestic Patent References:
| WO2015020161A1 | 2015-02-12 | |||
| WO2015107813A1 | 2015-07-23 |
Foreign References:
| JP2008143772A | 2008-06-26 | |||
| JP2009152511A | 2009-07-09 |
Attorney, Agent or Firm:
KAWAGUCHI, Yoshiyuki et al. (JP)
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