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Patent Searching and Data


Title:
NEGATIVE-PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2012/114963
Kind Code:
A1
Abstract:
The objective of the present invention is to provide a negative-pattern-forming method using an organic solvent in a developer, the negative-pattern-forming method being capable of minimizing surface roughness of an exposed portion after developing; and forming a desired fine pattern at high sensitivity; and to provide a photoresist composition used in the method. The present invention is a negative-pattern-forming method comprising the steps of: (1) using [A] a polymer including a structural unit (I) capable of producing an acid and [F] a photoresist composition containing an organic solvent, and forming a resist film on a substrate; (2) exposing the resist film to light; and (3) developing the exposed resist film using a developer including an organic solvent.

Inventors:
FURUKAWA TAIICHI (JP)
ITO KOJI (JP)
MIYATA HIROMU (JP)
SAKAKIBARA HIROKAZU (JP)
Application Number:
PCT/JP2012/053570
Publication Date:
August 30, 2012
Filing Date:
February 15, 2012
Export Citation:
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Assignee:
JSR CORP (JP)
FURUKAWA TAIICHI (JP)
ITO KOJI (JP)
MIYATA HIROMU (JP)
SAKAKIBARA HIROKAZU (JP)
International Classes:
G03F7/004; G03F7/038; G03F7/039; G03F7/32
Domestic Patent References:
WO2009057484A12009-05-07
Foreign References:
JPS59181535A1984-10-16
JPS61241745A1986-10-28
JP2011248019A2011-12-08
JP2011170316A2011-09-01
Attorney, Agent or Firm:
AMANO KAZUNORI (JP)
Kazuki Amano (JP)
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Claims: