NITRIDATION OF HIGH-K DIELECTRICS

Title:

NITRIDATION OF HIGH-K DIELECTRICS

Document Type and Number:

WIPO Patent Application WO2004044898

Kind Code:

A3

Abstract:

A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200 DEG C-700 DEG C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.

Inventors:

SENZAKI YOSHIHIDE (US)
BERCAW CRAIG (US)
CHATHAM III ROBERT HOOD (US)
HIGUCHI RANDALL (US)
LOPATA EUGENE S (US)

Application Number:

PCT/US2003/035338

Publication Date:

August 19, 2004

Filing Date:

November 05, 2003

Export Citation:

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Assignee:

AVIZA TECH INC (US)
SENZAKI YOSHIHIDE (US)
BERCAW CRAIG (US)
CHATHAM III ROBERT HOOD (US)
HIGUCHI RANDALL (US)
LOPATA EUGENE S (US)

International Classes:

H01L21/314; H01L21/316; (IPC1-7): H01L21/336; C23C16/00

Foreign References:

US6297095B1	2001-10-02
US20030072975A1	2003-04-17
US6482476B1	2002-11-19

Other References: