Title:
NITRIDE-BASED SEMICONDUCTOR CIRCUIT AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/130337
Kind Code:
A1
Abstract:
A nitride-based semiconductor circuit (3A) including a substrate structure (30), a nitride-based heterostructure (31), connectors (32), and connecting vias (38) is provided. The substrate structure (30) includes a first type semiconductor substrate (300), and a second type semiconductor substrate (301). The second type semiconductor substrate (301) is embedded in a region (3b) of the first type semiconductor substrate (300). The first type semiconductor substrate (300) has first dopants, and the second type semiconductor substrate (301) has second dopants to form a pn junction (302) between the first type semiconductor substrate (300) and the second type semiconductor substrate (301). The nitride-based heterostructure (31) is disposed on the substrate structure (30). The connectors (32) are disposed on the nitride-based heterostructure (31). The connecting vias (38) include a first interconnection (380) and a second interconnection (381). The first interconnection (380) electrically connects the first region (3a) of the first type semiconductor substrate (300) to one of the connectors (32). The second interconnection (381) electrically connects the second type semiconductor substrate (301) to another one of the connectors (32).
Inventors:
GAO WUHAO (CN)
ZHAO QIYUE (CN)
ZHAO QIYUE (CN)
Application Number:
PCT/CN2022/070620
Publication Date:
July 13, 2023
Filing Date:
January 07, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/10; H01L21/768; H01L21/8232; H01L23/48; H01L23/528; H01L27/085
Foreign References:
| CN113035841A | 2021-06-25 | |||
| US20140367744A1 | 2014-12-18 | |||
| CN113140566A | 2021-07-20 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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