Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/039746
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a source electrode and a drain electrode, a first gate electrode, and a second gate electrode. The first gate electrode is disposed between the source electrode and the drain electrode. The first gate electrode includes a first gate bottom portion and a first gate top portion. The first gate top portion is located over the first gate bottom portion and wider than the first gate bottom portion. The second gate electrode is disposed above the first gate electrode and between the source electrode and the drain electrode. The second gate electrode includes a second gate bottom portion and a second gate top portion. The second gate bottom portion is in contact with the first gate bottom portion. The second gate top portion is located over the second gate bottom portion and wider than the second gate bottom portion.
Inventors:
LIU YANG (CN)
ZHANG XIAO (CN)
TANG JUN (CN)
WONG KING YUEN (CN)
ZHANG XIAO (CN)
TANG JUN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2021/118482
Publication Date:
March 23, 2023
Filing Date:
September 15, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/423; H01L21/335; H01L29/778
Foreign References:
| US6180440B1 | 2001-01-30 | |||
| US20160043209A1 | 2016-02-11 | |||
| US20140159116A1 | 2014-06-12 | |||
| US6274893B1 | 2001-08-14 | |||
| CN111952366A | 2020-11-17 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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