Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/123392
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. The first nitride-based semiconductor layer includes a drift region and at least two doped barrier regions defining an aperture in the drift region. The nitride-based multiple semiconductor layer structure is disposed over the first nitride-based semiconductor layer and has a first heterojunction and a second heterojunction which are separated from each other. The gate electrode is received by the nitride-based multiple semiconductor layer structure and vertically aligns with the aperture in the drift region. The gate insulator layer is disposed between the nitride-based multiple semiconductor layer structure and the gate electrode. The source electrode is disposed over the first nitride-based semiconductor layer and abuts against the first and second heterojunctions of the nitride-based multiple semiconductor layer structure.
Inventors:
YANG CHAO (CN)
ZHOU CHUNHUA (CN)
ZHAO QIYUE (CN)
SHEN JINGYU (CN)
ZHOU CHUNHUA (CN)
ZHAO QIYUE (CN)
SHEN JINGYU (CN)
Application Number:
PCT/CN2021/143780
Publication Date:
July 06, 2023
Filing Date:
December 31, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/788; H01L21/337
Domestic Patent References:
| WO2011007483A1 | 2011-01-20 |
Foreign References:
| CN103155155A | 2013-06-12 | |||
| CN103201844A | 2013-07-10 | |||
| CN103579330A | 2014-02-12 | |||
| CN104282746A | 2015-01-14 | |||
| CN101232046A | 2008-07-30 | |||
| CN111656517A | 2020-09-11 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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