Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/036486
Kind Code:
A1
Abstract:
A semiconductor device includes a first III-V nitride-based layer, a second III-V nitride-based layer, a nitride-based transition layer, and a nitride-based transistor. The first III-V nitride-based layer is disposed over a substrate by applying a first V/III ratio in a first range. The second III-V nitride-based layer is disposed over the first III-V nitride-based layer by applying a second V/III ratio in a second range, in which the first range and the second range are mutually exclusive. The nitride-based transition layer is disposed between the first III-V nitride-based layer and the second III-V nitride-based layer to connect the first III-V nitride-based layer with the second III-V nitride-based layer, in which the nitride-based transition layer is formed by applying a third V/III ratio in a third range between the first range and second range. The nitride-based transistor is disposed over the second III-V nitride-based layer.
Inventors:
WU PENG-YI (CN)
LI CHUAN GANG (CN)
WU YUANYU (CN)
LI CHUAN GANG (CN)
WU YUANYU (CN)
Application Number:
PCT/CN2022/112840
Publication Date:
February 22, 2024
Filing Date:
August 16, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/76; H01L21/335; H01L29/772; H01L29/778
Foreign References:
| TW200705659A | 2007-02-01 | |||
| CN104051523A | 2014-09-17 | |||
| CN104465749A | 2015-03-25 | |||
| CN113169222A | 2021-07-23 | |||
| CN114582957A | 2022-06-03 | |||
| JP2008198691A | 2008-08-28 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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