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Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/065149
Kind Code:
A1
Abstract:
A nitride-based semiconductor device (1A) includes a first III-V nitride-based semiconductor layer, a second III-V nitride-based semiconductor layer, a gate dielectric layer (16), and a gate electrode (40). The second III-V nitride-based semiconductor layer is disposed over the first III-V nitride-based semiconductor layer and has a bandgap higher than a bandgap of the first III-V nitride-based semiconductor layer. The gate dielectric layer (16) is disposed over the second III-V nitride-based semiconductor layer. The gate electrode (40) is disposed over the gate dielectric layer (16) and includes a first portion and a second portion. The first portion makes contact with the gate dielectric layer (16) and has a rounded corner.

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Inventors:
ZHANG ZHONGYU (CN)
HU KAI (CN)
HE HUIXIN (CN)
GUO HAIBO (CN)
Application Number:
PCT/CN2022/121553
Publication Date:
April 04, 2024
Filing Date:
September 27, 2022
Export Citation:
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Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/423
Foreign References:
CN103681835A2014-03-26
JP2008306083A2008-12-18
CN111106169A2020-05-05
CN105164811A2015-12-16
US20130313609A12013-11-28
US20140159116A12014-06-12
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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