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Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/092544
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a depletion mode device, and an enhancement mode device. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The depletion mode device includes a first III-V semiconductor layer disposed over the second nitride-based semiconductor layer. The enhancement mode device includes a second III-V semiconductor layer disposed over the second nitride-based semiconductor layer. The first III-V semiconductor layer and the second III-V semiconductor layer have the same thickness, and the second III-V semiconductor layer is doped to have a conductivity type different than that of the first III-V semiconductor layer.

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Inventors:
LI SICHAO (CN)
YAN HUI (CN)
ZHOU CHUNHUA (CN)
Application Number:
PCT/CN2022/129175
Publication Date:
May 10, 2024
Filing Date:
November 02, 2022
Export Citation:
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Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/66
Foreign References:
US20150034962A12015-02-05
US20170271473A12017-09-21
CN101095233A2007-12-26
CN111341773A2020-06-26
CN112614834A2021-04-06
CN208028062U2018-10-30
CN208819832U2019-05-03
US20200328296A12020-10-15
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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