Title:
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/243518
Kind Code:
A1
Abstract:
A nitride-based semiconductor light-emitting device (100) comprising: an N-type cladding layer (102); an N-side guide layer (103); an active layer (104); a P-type cladding layer (108); and a P-side guide layer (upper P-side guide layer (107)) and an electron barrier layer (106) that are disposed between the active layer (104) and the P-type cladding layer (108), wherein the N-type cladding layer (102), the N-side guide layer (103), the P-side guide layer, the electron barrier layer (106), and the P-type cladding layer (108) contain Al, the active layer (104) has an N-side barrier layer (104a), a well layer (104b) that is disposed above the N-side barrier layer (104a), and a P-side barrier layer (104c) that is disposed above the well layer (104b), the average band gap energy of the P-side barrier layer (104c) is larger than the average band gap energy of the N-side barrier layer (104a), and the thickness of the P-side barrier layer (104c) is smaller than the thickness of the N-side barrier layer (104a).
Inventors:
OKAGUCHI TAKAHIRO
TAKAYAMA TORU
YOSHIDA SHINJI
TAKAYAMA TORU
YOSHIDA SHINJI
Application Number:
PCT/JP2023/021208
Publication Date:
December 21, 2023
Filing Date:
June 07, 2023
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01S5/343
Domestic Patent References:
| WO2021107032A1 | 2021-06-03 | |||
| WO2005101532A1 | 2005-10-27 |
Foreign References:
| JP2000261106A | 2000-09-22 | |||
| US20150171265A1 | 2015-06-18 | |||
| JP2010177651A | 2010-08-12 | |||
| JP2016219587A | 2016-12-22 | |||
| JP2013093382A | 2013-05-16 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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