Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/184995
Kind Code:
A1
Abstract:
The disclosed nitride semiconductor device is provided with the following: a first nitride semiconductor layer laid out above a substrate; a second nitride semiconductor layer laid out above the first nitride semiconductor layer; and a first electrode, second electrode, and p-n light emitter laid out above the second nitride semiconductor layer. The band gap of the second nitride semiconductor layer is larger than that of the first nitride semiconductor layer. The p-n light emitter has a p-type nitride semiconductor layer and an n-type nitride semiconductor layer. The emission energy of the p-n light emitter is higher than the electron trapping level of the first nitride semiconductor layer and is also higher than the electron trapping level of the second nitride semiconductor layer.
Inventors:
KURODA MASAYUKI
YANAGIHARA MANABU
OKI SHINICHI
YANAGIHARA MANABU
OKI SHINICHI
Application Number:
PCT/JP2014/001812
Publication Date:
November 20, 2014
Filing Date:
March 28, 2014
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/338; H01L27/095; H01L27/15; H01L29/417; H01L29/778; H01L29/812; H01L29/872; H01L33/32
Foreign References:
| JP2008047767A | 2008-02-28 | |||
| JP2006286746A | 2006-10-19 | |||
| JPH04139877A | 1992-05-13 | |||
| JPS60110173A | 1985-06-15 | |||
| JP2010073744A | 2010-04-02 | |||
| JP2008198731A | 2008-08-28 |
Other References:
YUTAKA ONO ET AL.: "Current Collapse in GaN HEMTs", IEICE TECHNICAL REPORT, ICD [INTEGRATED CIRCUITS AND DEVICES, vol. 101, no. 555, 9 January 2002 (2002-01-09), pages 19 - 24
Attorney, Agent or Firm:
FUJII, Kentaro et al. (JP)
Fujii Kentaro (JP)
Fujii Kentaro (JP)
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