Title:
NITRIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/161478
Kind Code:
A1
Abstract:
The present invention is a highly reliable nitride semiconductor element having a high withstand voltage when being operated. The nitride semiconductor element has a substrate region partially removed therefrom, said region corresponding to a region between a cathode electrode and an anode electrode, and the nitride semiconductor element has a p-type semiconductor embedded in the removed area, said p-type semiconductor having high heat conductivity. Diamond and WBG oxide semiconductor are used as the p-type semiconductor. The p-type semiconductor preferably has a band gap equal to or more than that of GaN (∆Eg=3 to 4 eV) to be more effective.
Inventors:
IKEDA NARIAKI (JP)
Application Number:
PCT/JP2013/058598
Publication Date:
October 31, 2013
Filing Date:
March 25, 2013
Export Citation:
Assignee:
ADVANCED POWER DEVICE RES ASS (JP)
International Classes:
H01L29/47; H01L21/20; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/812; H01L29/861; H01L29/868; H01L29/872
Foreign References:
| JP2009206142A | 2009-09-10 | |||
| JP2004510329A | 2004-04-02 | |||
| JPH01246867A | 1989-10-02 | |||
| JP2006261474A | 2006-09-28 | |||
| JP2010067662A | 2010-03-25 | |||
| JP2008117885A | 2008-05-22 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
Nakajima 淳 (JP)
Nakajima 淳 (JP)
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