Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/007837
Kind Code:
A1
Abstract:
The nitride semiconductor light-emitting element comprises a substrate for which the (0001) plane is the stacking surface, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a contact layer in the indicated sequence. The nitride semiconductor light-emitting element is constituted such that: the p-type semiconductor layer contains a cladding layer comprising AlGaN; the Al composition (50) of the cladding layer (18) declines with the distance from the interface on the substrate side; and the Mg concentration (52) of the cladding layer (18) has a maximum value at the interface (52d) on the substrate side or has a local maximum (52a) in the direction of separation from the interface on the substrate side. This nitride semiconductor light-emitting element achieves a suppression of light absorption and thus improved laser characteristics, by reducing the Mg doping amount by suppressing the memory effect.
Inventors:
MURAYAMA MASAHIRO (JP)
Application Number:
PCT/JP2022/013340
Publication Date:
February 02, 2023
Filing Date:
March 23, 2022
Export Citation:
Assignee:
SONY GROUP CORP (JP)
International Classes:
H01S5/343; H01S5/22
Foreign References:
| JP2017139252A | 2017-08-10 | |||
| JP2020150252A | 2020-09-17 | |||
| JP2011142317A | 2011-07-21 | |||
| JP2019083221A | 2019-05-30 | |||
| JP2015065245A | 2015-04-09 | |||
| US20040021142A1 | 2004-02-05 |
Attorney, Agent or Firm:
MATSUO Kenichiro (JP)
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