Title:
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/181163
Kind Code:
A1
Abstract:
The present invention is a nitride semiconductor substrate provided with: a heat-resistant support substrate in which a core comprising nitride ceramic is sealed in a sealing layer; a planarization layer which is provided on the heat-resistant support substrate; a silicon single crystal layer which is provided on the planarization layer and which has a carbon concentration of 1×1017atoms/cm3 or more; a carbide layer which is provided on the silicon single crystal layer, which has a thickness of 4-2000 nm, and of which the main component is silicon carbide; and a nitride semiconductor layer which is provided on the carbide layer. As a result, a high-quality nitride semiconductor substrate (in particular, a nitride semiconductor substrate suitable for GaN-based high-electron-mobility transistors (HEMTs) for high-frequency switches, power amplifiers, and power switching devices) and a manufacturing method therefor are provided.
Inventors:
TSUCHIYA KEITARO (JP)
QU WEIFENG (JP)
KUBOTA YOSHIHIRO (JP)
NAGATA KAZUTOSHI (JP)
QU WEIFENG (JP)
KUBOTA YOSHIHIRO (JP)
NAGATA KAZUTOSHI (JP)
Application Number:
PCT/JP2022/002747
Publication Date:
September 01, 2022
Filing Date:
January 26, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
SHINETSU CHEMICAL CO (JP)
SHINETSU CHEMICAL CO (JP)
International Classes:
C30B33/06; C23C16/34; C30B29/06; H01L21/02; H01L21/20; H01L21/205
Foreign References:
| JP2019523994A | 2019-08-29 | |||
| JP2020184616A | 2020-11-12 | |||
| JP2005203666A | 2005-07-28 | |||
| JP2012151401A | 2012-08-09 | |||
| JP2006196713A | 2006-07-27 | |||
| JP2007087992A | 2007-04-05 | |||
| US20110147772A1 | 2011-06-23 | |||
| JP2020098839A | 2020-06-25 | |||
| JP2019523994A | 2019-08-29 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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