NON-GALVANIC INTERCONNECT FOR PLANAR RF DEVICES

Title:

NON-GALVANIC INTERCONNECT FOR PLANAR RF DEVICES

Document Type and Number:

WIPO Patent Application WO/2022/065994

Kind Code:

A1

Abstract:

A radio frequency (RF) system including first and second planar RF devices coupled by non-galvanic interconnect. According to various embodiments, a first RF device and a second RF device are separated by a dielectric layer, each of the first and second RF devices including a plurality of pads disposed on surface and surrounded by a common electrode, the common electrode configured as a grounded metal shield, wherein pads of the first RF device and pads of the second RF device face each other to provide capacitive coupling between the pads. The disclosure may reduce complexity and size of the system, and offer more reliable and easily producible interconnection between elements of the RF system.

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Inventors:

MAKURIN MIKHAIL NIKOLAEVICH (RU)
SHEPELEVA ELENA ALEKSANDROVNA (RU)
LEE CHONGMIN (KR)

Application Number:

PCT/KR2021/013276

Publication Date:

March 31, 2022

Filing Date:

September 28, 2021

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD (KR)

International Classes:

H01Q1/38; H01Q13/20

Foreign References:

US20140140031A1	2014-05-22
US5936584A	1999-08-10
KR20100051270A	2010-05-17
US20120146209A1	2012-06-14
US20150381229A1	2015-12-31

Attorney, Agent or Firm:

LEE, Keon-Joo et al. (KR)

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