Title:
NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/120578
Kind Code:
A1
Abstract:
This non-volatile memory device (1) comprises: a first current mirror (CM1), a second current mirror (CM2), a first resistor unit (R10) which is connected to a first MOS transistor (M1) included in the first current mirror; a second resistor unit (R2) which is connected to a second MOS transistor (M2) included in the second current mirror; and a detection unit (SA) which detects a magnitude relationship between a first current (I1) that flows through the first MOS transistor and a second current (I2) that flows through the second MOS transistor, wherein the first resistor unit includes a first programmable memory element (NM1), and has a resistance value that varies according to whether the first memory element is programmed.
Inventors:
TAKENAKA SEIJI (JP)
Application Number:
PCT/JP2022/047120
Publication Date:
June 29, 2023
Filing Date:
December 21, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
G11C17/14
Foreign References:
| JP2005332964A | 2005-12-02 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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