Title:
NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/149418
Kind Code:
A1
Abstract:
A non-volatile memory device (1) comprises: a memory element (4) capable of executing a program operation; a switch (9) including a first end to which an application end of a first power-supply voltage (VDD) is connected; an even number of inverters (5, 6) that are connected, on an input side thereof, to a first node (N1) to which a second end of the switch and the memory element are connected; and a current restriction unit (8) which restricts, when a high-side transistor (61) included in a rear-stage inverter (6) arranged in the rearmost stage of the even number of inverters is in an on-state, a current which flows through a path via the application end of the first power-supply voltage, the transistor, and the memory element.
Inventors:
TAKENAKA SEIJI (JP)
Application Number:
PCT/JP2023/003014
Publication Date:
August 10, 2023
Filing Date:
January 31, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
G11C17/18; G11C7/06
Foreign References:
| JP2008204600A | 2008-09-04 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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