NON-VOLATILE MEMORY ELEMENT, NON-VOLATILE MEMORY DEVICE, NON-VOLATILE SEMICONDUCTOR DEVICE, AND NON-VOLATILE MEMORY ELEMENT MANUFACTURING METHOD

WIPO Patent Application WO/2010/087211

A1

The disclosed non-volatile memory element is provided with a first electrode (103), a second electrode (105), and a resistance change layer (104) present between the first electrode (103) and the second electrode (105), and the resistance value of which changes reversibly based on an electrical signal provided between the two electrodes (103, 105). The resistance change layer (104) is configured by lamination of a first tantalum oxide layer (107) that includes a first tantalum oxide and a second tantalum oxide layer (108) that includes a second tantalum oxide having an oxygen content different from the first tantalum oxide, and is configured to satisfy 0 < x < 2.5 when the first tantalum oxide is represented as TaOx and to satisfy x < y ≦ 2.5 when the second tantalum oxide is represented as TaOy. The second electrode (105) contacts the second tantalum oxide layer (108), and the second electrode (105) is composed of platinum and tantalum.

FUJII SATORU
ARITA KOJI
MITANI SATORU
MIKAWA TAKUMI

PCT/JP2010/000617

August 05, 2010

February 02, 2010

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PANASONIC CORP (JP)
FUJII SATORU
ARITA KOJI
MITANI SATORU
MIKAWA TAKUMI

H01L27/10; H01L45/00; H01L49/00

WO2008149484A1	2008-12-11
WO2008050716A1	2008-05-02
WO2008001712A1	2008-01-03

JPH09260603A	1997-10-03
JPH05110011A	1993-04-30
JP2007214573A	2007-08-23
JP2005197634A	2005-07-21

PATENT CORPORATE BODY ARCO PATENT OFFICE (JP)
Patent business corporation Owner old patent firm (JP)

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