Title:
NON-VOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/061633
Kind Code:
A1
Abstract:
Provided is a non-volatile storage device in which memory transistors that include oxide semiconductors are used. The non-volatile storage device is configured so as to be free from influences of deterioration of selection transistors connected serially with the memory transistors, and writing in the non-volatile storage device can be performed with low power consumption. A memory cell (1) includes a memory transistor (Qm) and first and second selection transistors (Q1 and Q2). During a writing action, the memory transistor (Qm) and the first selection transistor (Q1) are in an ON state, while the second selection transistor (Q2) is in an OFF state, and writing current is caused to run through a series circuit of the memory transistor (Qm) and the first selection transistor (Q1), so that the state is caused to make transition from a first state showing a transistor property to a second state showing an ohmic resistance property. During a reading action, the first selection transistor (Q1) is in an OFF state, while the second selection transistor (Q2) is in an ON state, and a voltage is applied to a series circuit of the memory transistor (Qm) and the second selection transistor (Q2), so that which state the memory transistor (Qm) assumes, the first state or the second state, is detected.
Inventors:
UEDA NAOKI
KATOH SUMIO
KATOH SUMIO
Application Number:
PCT/JP2013/077908
Publication Date:
April 24, 2014
Filing Date:
October 15, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
G11C13/00; G11C17/12; H01L27/10; H01L29/786
Foreign References:
| JP2006510203A | 2006-03-23 | |||
| JP2000106402A | 2000-04-11 |
Attorney, Agent or Firm:
MASAKI, YOSHIFUMI (JP)
Yoshifumi Masaki (JP)
Yoshifumi Masaki (JP)
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