NONDESTRUCTIVE CHARACTERIZATION OF THIN FILMS USING MEASURED BASIS SPECTRA AND/OR BASED ON ACQUIRED SPECTRUM

Title:

NONDESTRUCTIVE CHARACTERIZATION OF THIN FILMS USING MEASURED BASIS SPECTRA AND/OR BASED ON ACQUIRED SPECTRUM

Document Type and Number:

WIPO Patent Application WO2004061388

Kind Code:

A3

Abstract:

The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using a comparison process (e.g., a fitting process) to compare measured peak shapes for elemental and/or chemical species (e.g., Si peak shapes previously measured for a particular process to be monitored) to collected spectral data (e.g., using a non-linear least squares fitting algorithm). Further, the present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.

Inventors:

LARSON PAUL E (US)
WATSON DAVID G (US)
MOULDER JOHN F (US)

Application Number:

PCT/US2003/041372

Publication Date:

April 21, 2005

Filing Date:

December 23, 2003

Export Citation:

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Assignee:

PHYSICAL ELECTRONICS IND INC (US)
LARSON PAUL E (US)
WATSON DAVID G (US)
MOULDER JOHN F (US)

International Classes:

G01B11/06; G01B15/02; G01N23/227; (IPC1-7): G01B11/06; G01B15/02; G01N23/227

Foreign References:

US6399944B1	2002-06-04
US6173037B1	2001-01-09
US5280176A	1994-01-18
US5315113A	1994-05-24
EP0603943A1	1994-06-29

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