Title:
NONVOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/017683
Kind Code:
A1
Abstract:
Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
Inventors:
PARK JEA GUN (KR)
SEO SUNG HO (KR)
NAM WOO SIK (KR)
LEE JONG SUN (KR)
SEO SUNG HO (KR)
NAM WOO SIK (KR)
LEE JONG SUN (KR)
Application Number:
PCT/KR2012/006011
Publication Date:
January 30, 2014
Filing Date:
July 27, 2012
Export Citation:
Assignee:
IUCF HYU (KR)
PARK JEA GUN (KR)
SEO SUNG HO (KR)
NAM WOO SIK (KR)
LEE JONG SUN (KR)
PARK JEA GUN (KR)
SEO SUNG HO (KR)
NAM WOO SIK (KR)
LEE JONG SUN (KR)
International Classes:
H01L27/115; H01L21/8247
Domestic Patent References:
| WO2010131901A2 | 2010-11-18 |
Foreign References:
| US20050281082A1 | 2005-12-22 | |||
| US20090040805A1 | 2009-02-12 | |||
| US20050274943A1 | 2005-12-15 | |||
| US20070221986A1 | 2007-09-27 |
Attorney, Agent or Firm:
NAM, Seung-Hee (125 Teheran-ro, Gangnam-Gu, Seoul 135-911, KR)
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