Title:
NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/064446
Kind Code:
A1
Abstract:
Provided is a nonvolatile memory element capable of stable resistance change operation at a low breakdown voltage. The nonvolatile memory element (100) is equipped with a first electrode layer (103), a second electrode layer (105), and a resistance change layer (104) which is between the electrode layers (103 and 105) and reversibly transitions between a high-resistance state and a low-resistance state based on the polarity of a voltage applied between the electrode layers (103 and 105). The resistance change layer (104) is configured by layering of a first oxide layer (104a) containing an oxide of a first transition metal and a second oxide layer (104b) containing an oxide of a second transition metal different from the first transition metal. The standard electrode potential of the second transition metal is lower than the standard electrode potential of the first transition metal, and at least either (1) the dielectric constant of the second oxide layer (104b) is higher than the dielectric constant of the first oxide layer (104a), or (2) the band gap of the second oxide layer (104b) is smaller than the band gap of the first oxide layer (104a) is satisfied.
Inventors:
TAKAGI TAKESHI
WEI ZHIQIANG
NINOMIYA TAKEKI
MURAOKA SHUNSAKU
KANZAWA YOSHIHIKO
WEI ZHIQIANG
NINOMIYA TAKEKI
MURAOKA SHUNSAKU
KANZAWA YOSHIHIKO
Application Number:
PCT/JP2009/006622
Publication Date:
June 10, 2010
Filing Date:
December 04, 2009
Export Citation:
Assignee:
PANASONIC CORP (JP)
TAKAGI TAKESHI
WEI ZHIQIANG
NINOMIYA TAKEKI
MURAOKA SHUNSAKU
KANZAWA YOSHIHIKO
TAKAGI TAKESHI
WEI ZHIQIANG
NINOMIYA TAKEKI
MURAOKA SHUNSAKU
KANZAWA YOSHIHIKO
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Domestic Patent References:
| WO2009154266A1 | 2009-12-23 |
Foreign References:
| JP2008016854A | 2008-01-24 | |||
| JP2008021750A | 2008-01-31 |
Other References:
K.KINOSHITA ET AL.: "Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 37, 15 September 2006 (2006-09-15), pages L991 - L994
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house extensive 守 (JP)
New house extensive 守 (JP)
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