Title:
NONVOLATILE MEMORY ELEMENT, METHOD FOR MANUFACTURING THE NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/004705
Kind Code:
A1
Abstract:
Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes a reversible change in a resistance value in response to an electric signal applied across both the electrodes (103, 108). The resistance change layer (107) has at least a laminate structure comprising a first hafnium-containing layer having a composition represented by HfOx, wherein 0.9 ≤ x ≤ 1.6, and a second hafnium-containing layer having a composition represented by HfOy, wherein 1.8 < y < 2.0, stacked on top of each other.
Inventors:
MITANI SATORU
KANZAWA YOSHIHIKO
KATAYAMA KOJI
TAKAGI TAKESHI
KANZAWA YOSHIHIKO
KATAYAMA KOJI
TAKAGI TAKESHI
Application Number:
PCT/JP2009/003055
Publication Date:
January 14, 2010
Filing Date:
July 01, 2009
Export Citation:
Assignee:
PANASONIC CORP (JP)
MITANI SATORU
KANZAWA YOSHIHIKO
KATAYAMA KOJI
TAKAGI TAKESHI
MITANI SATORU
KANZAWA YOSHIHIKO
KATAYAMA KOJI
TAKAGI TAKESHI
International Classes:
H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| WO2008059701A1 | 2008-05-22 | |||
| WO2006075574A1 | 2006-07-20 |
Foreign References:
| JP2006279042A | 2006-10-12 | |||
| JP2007288008A | 2007-11-01 | |||
| JP2007287761A | 2007-11-01 | |||
| JP2008512857A | 2008-04-24 |
Attorney, Agent or Firm:
PATENT CORPORATE BODY ARCO PATENT OFFICE (JP)
Patent business corporation Owner old patent firm (JP)
Patent business corporation Owner old patent firm (JP)
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