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Title:
NONVOLATILE MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH THE SAME
Document Type and Number:
WIPO Patent Application WO/2010/140296
Kind Code:
A1
Abstract:
Provided are a nonvolatile memory element wherein even if a defect occurs in an nonvolatile memory element, writing data to or reading data from other nonvolatile memory elements arranged in the same line or the same row in which the defective nonvolatile memory element is disposed can be effectively prevented from not being permitted; and a semiconductor memory device provided with the nonvolatile memory element. The nonvolatile memory element is provided with a current control element (112) having nonlinear current-voltage characteristics; a resistance variation element (105) wherein a resistance state is reversibly shifted between a low-resistance state and a high-resistance state having a resistance value higher than that of the low-resistance state on the basis of a voltage pulse to be applied; and a fuse (103). The current control element (112), the resistance variation element (105), and the fuse (103) are connected in series. The fuse (103) is blown when the current control element (112) is substantially short-circuited.

Inventors:
WEI ZHIQIANG
TAKAGI TAKESHI
IIJIMA MITSUTERU
Application Number:
PCT/JP2010/002896
Publication Date:
December 09, 2010
Filing Date:
April 22, 2010
Export Citation:
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Assignee:
PANASONIC CORP (JP)
WEI ZHIQIANG
TAKAGI TAKESHI
IIJIMA MITSUTERU
International Classes:
G11C13/00; H01L27/10; H01L45/00; H01L49/00
Foreign References:
JP2008527613A2008-07-24
JP2004193282A2004-07-08
Attorney, Agent or Firm:
PATENT CORPORATE BODY ARCO PATENT OFFICE (JP)
Patent business corporation Owner old patent firm (JP)
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