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Title:
NONVOLATILE MEMORY AND RECONFIGURABLE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2010/106876
Kind Code:
A1
Abstract:
Provided is nonvolatile memory wherein the area is reduced as much as possible. The nonvolatile memory has at least one memory cell (1) which is provided with: resistance variable memory (4) wherein one end is connected to a first terminal to which a drive voltage is to be applied and the other end is connected to a second terminal (5); and a diode (6) wherein the cathode is connected to the second terminal and the anode is connected to a third terminal to which a grounding potential is to be applied. The memory cell output that corresponds to the resistance state of the resistance variable memory is otuptuted from the second terminal.

Inventors:
IKEGAMI KAZUTAKA (JP)
KINOSHITA ATSUHIRO (JP)
HAGISHIMA DAISUKE (JP)
Application Number:
PCT/JP2010/052635
Publication Date:
September 23, 2010
Filing Date:
February 22, 2010
Export Citation:
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Assignee:
TOSHIBA KK (JP)
IKEGAMI KAZUTAKA (JP)
KINOSHITA ATSUHIRO (JP)
HAGISHIMA DAISUKE (JP)
International Classes:
G11C13/00; H03K19/177
Domestic Patent References:
WO2005098952A12005-10-20
Foreign References:
JP2004213860A2004-07-29
JP2005101535A2005-04-14
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
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