Title:
NONVOLATILE PHASE CHANGE MAGNETIC MATERIAL, MANUFACTURING METHOD THEREOF, AND NONVOLATILE PHASE CHANGE MAGNETIC MEMORY USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2006/025413
Kind Code:
A1
Abstract:
There are provided a memory and its manufacturing method based on a new operation principle and capable of improving the cost, service life, energy consumption, and recording density as compared to a conventional optical disc and hard disc. A nonvolatile phase change magnetic memory includes a substrate and a film of transition metal chalcogenide having a composition of stoichiometric ratio composition lacking in transition metal which is mounted on the substrate. By applying a temperature history to a small portion of the film, the small portion is formed into a ferromagnetic phase (1) where holes (4) of transition metal (2) are regularly arranged or into an antiferromagnetic phase (7) where holes (4) of transition metal (2) are irregularly arranged so that magnetization based on the ferromagnetic phase (1) or the antiferromagnetic phase (7) servers as recording information.
Inventors:
TAKAGI HIDENORI (JP)
TAKAYAMA TOMOHIRO (JP)
TAKAYAMA TOMOHIRO (JP)
Application Number:
PCT/JP2005/015808
Publication Date:
March 09, 2006
Filing Date:
August 30, 2005
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
TAKAGI HIDENORI (JP)
TAKAYAMA TOMOHIRO (JP)
TAKAGI HIDENORI (JP)
TAKAYAMA TOMOHIRO (JP)
International Classes:
H01F1/10; G11B11/105; H01F10/18
Foreign References:
| JPH01232550A | 1989-09-18 | |||
| JP2004335623A | 2004-11-25 | |||
| JPS4873798A | 1973-10-04 | |||
| JPS4839516A | 1973-06-11 | |||
| JPH06162563A | 1994-06-10 | |||
| JP2002255698A | 2002-09-11 |
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjukugyoen Bldg., 2-3-10, Shinjuku, Shinjuku-ku Tokyo, JP)
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