Title:
NONVOLATILE RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/123882
Kind Code:
A1
Abstract:
A nonvolatile resistive memory, comprising an inert metal electrode (12), a resistive functional layer (14), and an easily oxidizable metal electrode (15), and characterized in that: inserted between the inert metal electrode (12) and the resistive functional layer (14) is a graphene barrier layer (13) that is capable of stopping easily oxidizable metal ions from migrating into the inert metal electrode (12) via the resistive functional layer (14) under the effects of an electric field during a device programming process. The nonvolatile resistive memory device and the manufacturing method therefor have one or more layers of graphene thin films servings as a metal ion barrier layer added between the inert electrode and the solid-state electrolyte resistive functional layer to stop electrically-conductive metal filaments formed in the resistive layer from spreading into the inert electrode layer during a RRAM device programming process, thus eliminating occurrence of the phenomenon of erroneous programming during a device erase process, and increasing the reliability of the device.
Inventors:
LIU QI (CN)
LIU MING (CN)
SUN HAITAO (CN)
ZHANG KEKE (CN)
LONG SHIBING (CN)
LV HANGBING (CN)
BANERJEE WRITAM (CN)
ZHANG KANGWEI (CN)
LIU MING (CN)
SUN HAITAO (CN)
ZHANG KEKE (CN)
LONG SHIBING (CN)
LV HANGBING (CN)
BANERJEE WRITAM (CN)
ZHANG KANGWEI (CN)
Application Number:
PCT/CN2015/079006
Publication Date:
August 11, 2016
Filing Date:
May 14, 2015
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L45/00
Foreign References:
| US20110240951A1 | 2011-10-06 | |||
| CN102593097A | 2012-07-18 | |||
| CN102709293A | 2012-10-03 | |||
| JP2011238828A | 2011-11-24 |
Attorney, Agent or Firm:
BEIJING BLUEIP INTELLECTUAL PROPERTY AGENCY FIRM (CN)
北京蓝智辉煌知识产权代理事务所（普通合伙） (CN)
北京蓝智辉煌知识产权代理事务所（普通合伙） (CN)
Download PDF: