Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/026625
Kind Code:
A1
Abstract:
In a nonvolatile semiconductor memory device comprising a first wiring layer, a memory cell portion formed on the first wiring layer by laminating a nonohmic element layer of MIM structure sandwiching an insulating film by metal films and a variable resistance element layer, and a second wiring layer formed on the memory cell portion, the insulating film of the nonohmic element layer includes a plurality of layers having a permittivity different from that of an electron barrier, or contains dots of impurity atom, a semiconductor or a metal forming a defect level in the insulating film. A variable resistance element capable of scaling-down of memory cell and low temperature film deposition, and a nonvolatile semiconductor memory device employing the nonohmic element can be obtained using these structures.
Inventors:
MURAOKA KOICHI (JP)
NAGASHIMA HIROYUKI (JP)
NAGASHIMA HIROYUKI (JP)
Application Number:
PCT/JP2008/065776
Publication Date:
March 11, 2010
Filing Date:
September 02, 2008
Export Citation:
Assignee:
TOSHIBA KK (JP)
MURAOKA KOICHI (JP)
NAGASHIMA HIROYUKI (JP)
MURAOKA KOICHI (JP)
NAGASHIMA HIROYUKI (JP)
International Classes:
H01L27/10; H01L29/66; H01L29/88
Foreign References:
| JP2006203098A | 2006-08-03 | |||
| JPH05347422A | 1993-12-27 | |||
| JPH10125939A | 1998-05-15 | |||
| JP2007188977A | 2007-07-26 |
Attorney, Agent or Firm:
SUZUYE, Takehiko et al. (JP)
Takehiko Suzue (JP)
Takehiko Suzue (JP)
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