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Title:
NONVOLATILE STORAGE ELEMENT AND NONVOLATILE STORAGE DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/038423
Kind Code:
A1
Abstract:
A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107).  The variable resistance layer has a multilayer structure which includes at least three layers, i.e., a first transition metal oxide layer (104), a second transition metal oxide layer (106) having oxygen concentration higher than that of the first transition metal oxide layer (104), and a transition metal nitride layer (105).  The second transition metal oxide layer (106) is in contact with the first electrode (103) or the second electrode (107), and the transition metal nitride layer (105) is disposed between the first transition metal oxide layer (104) and the second transition metal oxide layer (106).

Inventors:
NINOMIYA TAKEKI
ARITA KOJI
MIKAWA TAKUMI
FUJII SATORU
Application Number:
PCT/JP2009/004976
Publication Date:
April 08, 2010
Filing Date:
September 29, 2009
Export Citation:
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Assignee:
PANASONIC CORP (JP)
NINOMIYA TAKEKI
ARITA KOJI
MIKAWA TAKUMI
FUJII SATORU
International Classes:
H01L45/00; H01L27/10; H01L49/00
Domestic Patent References:
WO2007102483A12007-09-13
WO2008050716A12008-05-02
Foreign References:
JP2005317976A2005-11-10
JP2004349690A2004-12-09
JP2009218260A2009-09-24
JP2008244397A2008-10-09
JP2009021524A2009-01-29
Attorney, Agent or Firm:
PATENT CORPORATE BODY ARCO PATENT OFFICE (JP)
Patent business corporation Owner old patent firm (JP)
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