Title:
NORMALLY-OFF DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/258732
Kind Code:
A1
Abstract:
Provided are a normally-off device and a manufacturing method therefor, which relate to the technical field of semiconductors. The normally-off device comprises: a substrate; an epitaxial layer connected to the substrate, wherein the epitaxial layer comprises a first P-type nitride layer and a modified layer, the modified layer is located on both sides of the first P-type nitride layer, the modified layer is formed by means of modifying a second P-type nitride layer in a preset area, and the first P-type nitride layer and the second P-type nitride layer are formed by means of synchronous epitaxial growth; a barrier layer connected to the first P-type nitride layer and the modified layer; a gate electrode connected to the barrier layer; and a source electrode and a drain electrode connected to the modified layer. The method of performing modification in a partial area is easier to realize, and therefore it is more convenient to realize the arrangement where there are effective P-type and desired device structures only in the partial area. Moreover, the normally-off device and the manufacturing method therefor provided in the present application also have the effect of a higher threshold voltage and a lower gate leakage current.
Inventors:
LI ZILAN (CN)
Application Number:
PCT/CN2021/074156
Publication Date:
December 30, 2021
Filing Date:
January 28, 2021
Export Citation:
Assignee:
GUANGDONG ZHINENG TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Foreign References:
| CN212062440U | 2020-12-01 | |||
| CN210467852U | 2020-05-05 | |||
| US20120267637A1 | 2012-10-25 |
Other References:
See also references of EP 3955317A4
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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