Title:
NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS
Document Type and Number:
WIPO Patent Application WO/2020/184904
Kind Code:
A1
Abstract:
The present invention relates to a method for forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming four layers of a photoresist film/an anti-reflective film/a SiON film/an organic hard mask film on a wafer before an etching process, the method of the present invention is an innovative method capable of implementing the same etching pattern by forming only two layers consisting of a photoresist film/a multifunctional organic-inorganic mask film. Compared to the conventional method, the method of the present invention significantly simplifies processes so as to drastically reduce production time and cost, and the method of the present invention no longer requires expensive coating and deposition machines used in the conventional method. Accordingly, the method of the present invention exhibits an excellent effect of reducing costs for expensive precursors and organic hard masks required for SiON deposition and even costs for investment and maintenance with respect to relevant machines required for the deposition.
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Inventors:
LEE SU JIN (KR)
KIM GI HONG (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
KIM GI HONG (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
Application Number:
PCT/KR2020/003137
Publication Date:
September 17, 2020
Filing Date:
March 06, 2020
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
H01L21/033; G03F7/16; G03F7/20; H01L21/02; H01L21/311; H01L21/324
Foreign References:
| KR20070072334A | 2007-07-04 | |||
| KR20090001023A | 2009-01-08 | |||
| KR20090003724A | 2009-01-12 | |||
| KR20080025818A | 2008-03-24 | |||
| US20060040103A1 | 2006-02-23 |
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
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