Title:
A NOVEL IR IMAGE SENSOR USING A SOLUTION PROCESSED PBS PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2014/178923
Kind Code:
A3
Abstract:
An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots.
Inventors:
KIM DO YOUNG (US)
SO FRANKY (US)
LEE JAE WOONG (US)
SO FRANKY (US)
LEE JAE WOONG (US)
Application Number:
PCT/US2014/012722
Publication Date:
January 15, 2015
Filing Date:
January 23, 2014
Export Citation:
Assignee:
UNIV FLORIDA (US)
International Classes:
H01L27/146
Domestic Patent References:
| WO2013003850A2 | 2013-01-03 | |||
| WO2012178071A2 | 2012-12-27 |
Foreign References:
| US20100302419A1 | 2010-12-02 | |||
| US20110303906A1 | 2011-12-15 | |||
| US20060157806A1 | 2006-07-20 |
Other References:
See also references of EP 2948984A4
Attorney, Agent or Firm:
WALSH, Edmund J. et al. (Greenfield & Sacks P.C.,600 Atlantic Avenu, Boston MA, US)
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