Title:
ONE-TIME PROGRAMMABLE MEMORY AND CONTROL METHOD THEREFOR, STORAGE SYSTEM, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/216789
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors and provides a one-time programmable memory and a control method therefor, a storage system, and an electronic device, for use in solving the problems that the area occupied by a one-time programmable memory is large, the number of storage units per unit size is small, and the storage capacity is low. The one-time programmable memory comprises a substrate and at least one storage unit. The storage unit is located on the substrate. The storage unit comprises a transistor and at least one capacitor which are sequentially arranged in a first direction that is perpendicular to the substrate. The transistor comprises a gate, a first electrode, and a second electrode, and the first electrode is away from the substrate relative to the second electrode. The capacitor comprises a first electrode and a second electrode, and a dielectric layer located between the first electrode and the second electrode, wherein the first electrode is connected to the first electrode of the transistor. The described one-time programmable memory is applied to an electronic device and is used for storing data.
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Inventors:
ZHAO SIYU (CN)
XU LIANG (CN)
BU SITONG (CN)
XU JEFFREY JUNHAO (CN)
FANG YICHEN (CN)
FAN RENSHI (CN)
XU LIANG (CN)
BU SITONG (CN)
XU JEFFREY JUNHAO (CN)
FANG YICHEN (CN)
FAN RENSHI (CN)
Application Number:
PCT/CN2023/087305
Publication Date:
November 16, 2023
Filing Date:
April 10, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B53/20; G11C5/14; G11C7/18; G11C8/14; G11C16/08; G11C16/24; G11C16/34; H10B53/30
Foreign References:
CN112309455A | 2021-02-02 | |||
CN111326514A | 2020-06-23 | |||
CN101140935A | 2008-03-12 | |||
CN113540099A | 2021-10-22 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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