Title:
OPENING STRUCTURE AND METHOD FOR FORMING SAME, AND CONTACT PLUG AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2022/062494
Kind Code:
A1
Abstract:
Provided are an opening structure and method for forming same, and a contact plug and method for forming same; the method for forming said opening structure is: providing a substrate, said substrate having a target layer formed therein, the substrate exposing the surface of said target layer; forming an annular spacer on said surface of the target layer, said annular spacer having a central through-hole in the middle exposing part of the surface of the target layer; forming a dielectric layer covering the substrate, target layer, and annular spacer; etching said dielectric layer, and forming etching holes in the dielectric layer in communication with said central through-hole, said etching holes and the central through-hole constituting the opening structure.
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Inventors:
WU PING-HENG (CN)
Application Number:
PCT/CN2021/100699
Publication Date:
March 31, 2022
Filing Date:
June 17, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/48; H01L21/768; H01L23/528
Foreign References:
| US5285110A | 1994-02-08 | |||
| CN104425567A | 2015-03-18 | |||
| US20040197986A1 | 2004-10-07 | |||
| CN108122845A | 2018-06-05 | |||
| KR20080093738A | 2008-10-22 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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