OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE

WIPO Patent Application WO/2018/161835

A1

Semiconductor devices and methods for forming the semiconductor devices are disclosed. A method for forming device openings includes forming a material layer (600) over a first region (I) and a second region (II) of a substrate (200), the first region (I) being adjacent to the second region (II), forming a mask layer (500) over the material layer (600), the mask layer (500) covering the first region (I) and the second region (II), and forming a patterning layer (101) over the mask layer (500). The patterning layer (101) covers the first region (I) and the second region (II) and including openings corresponding to the first region (I). The plurality of openings includes a first opening (110) adjacent to a boundary between the first region (I) and the second region (II) and a second opening (120) further away from the boundary. Along a plane parallel to a top surface of the substrate (200), a size of the first opening (110) is greater than a size of the second opening (120).

HE JIA (CN)
HUANG HAIHUI (CN)
LIU FANDONG (CN)
YANG YAOHUA (CN)
HONG PEIZHEN (CN)
XIA ZHILIANG (CN)
HUO ZONGLIANG (CN)
FENG YAOBIN (CN)
CHEN BAOYOU (CN)
CAO QINGCHEN (CN)

PCT/CN2018/077716

September 13, 2018

March 01, 2018

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YANGTZE MEMORY TECH CO LTD (CN)

H01L27/11551; H01L27/11524; H01L27/1157; H01L27/11578

CN105428319A	2016-03-23
CN103680611A	2014-03-26
CN106847821A	2017-06-13
US20140264533A1	2014-09-18

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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