Title:
OPTICAL MODULATOR
Document Type and Number:
WIPO Patent Application WO/2023/238403
Kind Code:
A1
Abstract:
Through the present invention optical modulation efficiency is increased by adopting a structure whereby an ion implantation pattern can be controlled with a wider range of options. Provided is an optical modulator that includes a semiconductor layer having a pn junction in an optical waveguide core, and applies a bias voltage together with a high-frequency (RF) signal to the semiconductor layer to modulate an optical signal, wherein the optical modulator comprises a low-concentration p-type semiconductor layer and a low-concentration n-type semiconductor layer that form the pn junction, and an intermediate-concentration p-type semiconductor layer that is added to the low-concentration p-type semiconductor layer or an intermediate-concentration n-type semiconductor layer that is added to the low-concentration n-type semiconductor layer, and the optical waveguide core is constituted from the three layers including the low-concentration p-type semiconductor layer, the intermediate-concentration p-type semiconductor layer, and the low-concentration n-type semiconductor layer, or the three layers including the low-concentration p-type semiconductor layer, the intermediate-concentration n-type semiconductor layer, and the low-concentration n-type semiconductor layer.
Inventors:
TSUZUKI KEN (JP)
JIZODO MAKOTO (JP)
JIZODO MAKOTO (JP)
Application Number:
PCT/JP2022/023525
Publication Date:
December 14, 2023
Filing Date:
June 10, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
G02F1/015
Foreign References:
| US20210373363A1 | 2021-12-02 | |||
| US20160018677A1 | 2016-01-21 | |||
| US20100080504A1 | 2010-04-01 | |||
| US20190018262A1 | 2019-01-17 |
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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