OPTICAL PROXIMITY CORRECTION METHOD, MASK, AND READABLE STORAGE MEDIUM

WIPO Patent Application WO/2022/110902

A1

An optical proximity correction method, a mask, a readable storage medium, and a computer device. Said correction method comprises: acquiring photolithographic mask design patterns (S102); selecting, from the photolithographic mask design patterns, an isolated metal pattern (10, 20) meeting a first condition (S104); pre-processing the isolated metal pattern (10, 20), so as to cause the widths of two ends of the isolated metal pattern (10, 20) to be greater than the width of the middle (S106); and obtaining a mask-making pattern according to the pre-processed isolated metal pattern (10, 20) (S108). Additional OPC processing is performed on the isolated metal pattern (10, 20), so as to cause the widths of both ends of the isolated metal pattern (10, 20) are greater than the width of the middle, avoiding the problem that after the isolated metal pattern (10, 20) forms a metal line, line shortage occurs at the ends due to an optical proximity effect, which causes the metal line to have a poor wrapping effect on filling of filled holes in the previous layer and leads to fluctuation of key parameters of a device, so that a product can have a stable performance.

ZHU BIN (CN)
WANG CHING-HENG (CN)
CHEN JIE (CN)
ZHANG JIAN (CN)
CAO NAN (CN)
SUN PENGFEI (CN)

PCT/CN2021/112075

June 02, 2022

August 11, 2021

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CSMC TECHNOLOGIES FAB2 CO LTD (CN)

G03F1/36

US20070212620A1	2007-09-13
JPH0566550A	1993-03-19
JPH11271957A	1999-10-08
JPH06123962A	1994-05-06
JPH11265055A	1999-09-28
JPH11258770A	1999-09-24
CN1361450A	2002-07-31
US20050196686A1	2005-09-08
KR20060075371A	2006-07-04

J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)

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