Organic electronic device comprising an organic semiconductor layer Technical Field

The present invention relates to compounds, for use as a layer material for electronic devices, and to an organic electronic device comprising the layer material, and a method of manufacturing the same.

Background Art

Organic electronic devices, such as organic light-emitting diodes OLEDs, which are self- emitting devices, have a wide viewing angle, excellent contrast, quick response, high brightness, excellent operating voltage characteristics, and color reproduction. A typical OLED comprises an anode, a hole transport layer HTL, an emission layer EML, an electron transport layer ETL, and a cathode, which are sequentially stacked on a substrate. In this regard, the HTL, the EML, and the ETL are thin films formed from organic compounds.

When a voltage is applied to the anode and the cathode, holes injected from the anode move to the EML, via the HTL, and electrons injected from the cathode move to the EML, via the ETL. The holes and electrons recombine in the EML to generate excitons. When the excitons drop from an excited state to a ground state, light is emitted. The injection and flow of holes and electrons should be balanced, so that an OLED having the above-described structure has excellent efficiency and/or a long lifetime.

Performance of an organic light emitting diode may be affected by characteristics of the organic semiconductor layer, and among them, may be affected by characteristics of an organic material of the organic semiconductor layer.

Particularly, development for an organic material being capable of increasing electron mobility and simultaneously increasing electrochemical stability is needed so that the organic electronic device, such as an organic light emitting diode, may be applied to a large-size flat panel display.

There remains a need to improve performance of organic semiconductor layers, organic semiconductor materials, as well as organic electronic devices thereof, in particular to achieve higher efficiency through improving the characteristics of the compounds comprised therein. In particular there is a need for alternative organic semiconductor materials and organic semiconductor layers as well as organic electronic devices having improved efficiency at low operating voltage.

There is a need for alternative compounds having increased efficiency and at the same time keeping the operating voltage and thereby the power consumption low to deliver long battery life for example mobile electronic devices.

DISCLOSURE

An aspect of the present invention provides a compound according to formula I:

(I),

wherein

X ¹ to X ^: 20 are independently selected from C-H, C-Z, and/or at least two of X ¹ to X ⁵ ,

X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated aromatic ring, and

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II:

Ar 1 Ar"

m

n ^■■■ (ID;

wherein

Ar ¹ is independently selected from a substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted triphenylene, substituted or unsubstituted anthracene or substituted or unsubstituted C ₁₄ to C ₁₈ fused non-hetero aryl, wherein

the substituents of the substituted phenylene biphenylene, triphenylene, anthracene or C ₁₄ to C ₁₈ fused aryl are independently selected from nitrile, linear C _1-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3-12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR, (P=0)R ₂ , -NR ² R ³ or -BR ² R ³ ;

Ar ² is independently selected from substituted or unsubstituted C ₆ -60 non-hetero aryl, wherein

the substituents of the C ₆ -60 non-hetero aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , SiR ₃ , (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; or

Ar ² is formula I, with the exception that X ¹ to X ²⁰ are not C-Z;

R, R ² and R ³ is independently selected from H, C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3-C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 non-hetero aryl;

n is 1 or 2;

m is selected from 1, 2 or 3; wherein

none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring;

wherein the compound of formula 1 comprises at least about 8 to about 14 non-hetero aromatic rings;

wherein a non-hetero 6 member aromatic ring of Ar ² bonds direct via a single bond to Ar ¹ ;

wherein only one tetra aryl ethylene group (TAE) bonds direct via a single bond at Ar ¹ ;

optional excluding compounds of formula I that are superimposable on its mirror image.

The compound according to formula I can be for example used as a layer material for an organic electronic device. According to one embodiment none of the non-hetero aromatic rings A, B, C and/or D may be directly bridged with each other, forming an annelated aromatic ring.

As used herein m = 1 means that Ar ¹ is substituted with one Ar ² substituent. As used herein m = 2 means that Ar ¹ is substituted with two Ar ² substituents. As used herein m = 3 means that Ar ¹ is substituted with three Ar ² substituents.

According to one mbodiment a compound is provided according to formula I:

wherein

X ¹ to X ^: 20 are independently selected from C-H, C-Z, and/or at least two of X ¹ to X ⁵ ,

X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated aromatic ring, and

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II: m

wherein

Ar ¹ is independently selected from a substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted triphenylene, substituted or unsubstituted anthracene or substituted or unsubstituted C ₁₄ to C ₁₈ fused non-hetero aryl, wherein

the substituents of the substituted phenylene biphenylene, triphenylene, anthracene or C ₁₄ to C ₁₈ fused aryl are independently selected from nitrile, linear C _1-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12

fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3-12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR, (P=0)R ₂ ;

Ar ² is independently selected from substituted or unsubstituted C ₆ -60 non-hetero aryl, wherein

the substituents of the C ₆ -60 non-hetero aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , SiR ₃ , (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; or

Ar ² is formula I, with the exception that X ¹ to X ²⁰ are not C-Z;

R is independently selected from C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3-C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 non-hetero aryl; n is 1 or 2;

m is selected from 1, 2 or 3; wherein

none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring;

wherein the compound of formula 1 comprises at least about 8 to about 14 non-hetero aromatic rings;

wherein a non-hetero 6 member aromatic ring of Ar ² bonds direct via a single bond to Ar ¹ ;

wherein one, two or three terra aryl ethylene group (TAE) bonds direct via a single bond at Ar ¹ ; wherein the compound of formula I is free of a triple bond; and optional excluding compounds of formula I that are superimposable on its mirror image.

According to another aspect the layer material can be an organic semiconductor layer, which is used for an organic electronic device. For example the organic electronic device can be an OLED or there like.

According to one embodiment none of the non-hetero aromatic rings A, B, C and/or D may be directly bridged with each other, forming an annelated aromatic ring. As used herein m = 1 means that Ar ¹ is substituted with one Ar ² substituent. As used herein m = 2 means that Ar ¹ is substituted with two Ar ² substituents. As used herein m = 3 means that Ar ¹ is substituted with three Ar ² substituents.

According to one embodiment a compound is provided according to formula I:

wherein

X ¹ to X ^: 20 are independently selected from C-H, C-Z, and/or at least two of X ¹ to X ⁵ ,

X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated aromatic ring, and

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II: wherein

Ar ¹ is independently selected from a substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted triphenylene, substituted or unsubstituted anthracene or substituted or unsubstituted Ci ₄ to Cis fused non-hetero aryl, wherein

the substituents of the substituted phenylene biphenylene, triphenylene, anthracene or Ci ₄ to Cis fused aryl are independently selected from nitrile, linear Ci-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3 12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR, (P=0)R ₂ ;

Ar ² is independently selected from substituted or unsubstituted C ₆ -60 non-hetero aryl, wherein

the substituents of the C ₆ -60 non-hetero aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , SiR ₃ , (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; or

Ar ² is formula I, with the exception that X ¹ to X ²⁰ are not C-Z;

R is independently selected from a C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20

thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3- C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 non- hetero aryl;

n is 1 or 2;

m is selected from 1, 2 or 3; wherein

none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring;

wherein the compound of formula 1 comprises at least 8 to 14 non-hetero aromatic rings;

wherein a non-hetero 6 member aromatic ring of Ar ² bonds direct via a single bond to Ar ¹ ;

wherein the compound of formula I is free of a hetero aromatic ring; and optional excluding compounds of formula I that are superimposable on its mirror image.

According to one embodiment a compound is provided according to formula I:

wherein

X ¹ to X ^: 20 are independently selected from C-H, C-Z, and/or at least two of X ¹ to X ⁵ ,

X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated aromatic ring, and

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II: wherein

Ar ¹ is independently selected from a substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted triphenylene, substituted or unsubstituted anthracene or substituted or unsubstituted C ₁₄ to C ₁₈ fused non-hetero aryl, wherein

the substituents of the substituted phenylene biphenylene, triphenylene, anthracene or C ₁₄ to C ₁₈ fused aryl are independently selected from nitrile, linear C _1-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3-12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR, (P=0)R ₂ ;

Ar ² is independently selected from substituted or unsubstituted C ₆ -60 non-hetero aryl, wherein the substituents of the C ₆ -60 non-hetero aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , SiR ₃ , (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; or

Ar ² is formula I, with the exception that X ¹ to X ²⁰ are not C-Z;

R may be independently selected from C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20

thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3- C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 non- hetero aryl;

n is 1 or 2;

m is selected from 1, 2 or 3; wherein

none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring;

wherein the compound of formula 1 comprises at least 8 to 14 non-hetero aromatic rings;

wherein a non-hetero 6 member aromatic ring of Ar ² bonds direct via a single bond to Ar ¹ ;

wherein the compound of formula I comprises about 8 to about 14 non hetero aromatic 6 member rings, preferably about 8 to about 12 non hetero aromatic 6 member rings and about 0 to about 4 non hetero aromatic 5 member rings, preferably about 1 to about 2 non hetero aromatic 5 member rings, and optional the compound of formula I is free of hetero aromatic rings; and optional excluding compounds of formula I that are superimposable on its mirror image.

According to one embodiment a compound according to formula I is provided, wherein the compound of formula I comprises about 8 to about 14 non hetero aromatic 6 member rings and about 0 to about 4 non hetero aromatic 5 member rings.

According to one embodiment a compound according to formula I is provided, wherein the compound of formula I comprises about 8 to about 14 non hetero aromatic 6 member rings, preferably about 9 to about 13 non hetero aromatic 6 member rings and further preferred about 10 to about 12 non hetero aromatic 6 member rings.

According to one embodiment a compound according to formula I is provided, wherein the compound of formula I comprises about 0 to about 4 non hetero aromatic 5 member rings, preferably about 1 to 3 non hetero aromatic 5 member rings and further preferred 2 non hetero aromatic 5 member rings. According to one embodiment a compound according to formula I is provided, wherein the compound of formula I comprises about 8 to about 14 non hetero aromatic 6 member rings, preferably about 9 to about 13 non hetero aromatic 6 member rings and further preferred about 10 to about 12 non hetero aromatic 6 member rings; and about 0 to about 4 non hetero aromatic 5 member rings, preferably about 1 to 3 non hetero aromatic 5 member rings and further preferred 2 non hetero aromatic 5 member rings.

According to one embodiment a compound according to formula I is provided, wherein Ar ¹ comprises about 1 to about 3 non hetero aromatic 6 member rings, preferably about 2 to about 3 non hetero aromatic 6 member rings.

According to one embodiment a compound according to formula I is provided, wherein Ar ² comprises about 1 to about 9 non hetero aromatic 6 member rings, preferably about 2 to about 8 non hetero aromatic 6 member rings or about 4 to about 6 non hetero aromatic 6 member rings.

It is noted that the total number of non-hetero aromatic rings is selected such that the compound of formula I comprises 8 to 14 non-hetero aromatic rings.

According to one embodiment a compound according to formula I is provided, which comprises 8 to 14 non-hetero aromatic rings, wherein the 8 to 14 non-hetero aromatic rings are 6- member non-hetero aromatic rings.

According to one embodiment a compound according to formula I is provided, wherein the substituents of the compound of formula I can be independently selected from nitrile and/or (P=0)R ₂ , wherein R is independently selected from a C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3-C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl or C6-C20 non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, wherein the substituents of the compound of formula I can be independently selected from nitrile and/or (P=0)R ₂ , wherein R is independently selected from a C1-C12 linear alkyl, C1-C12 alkoxy, C1-C12 thioalkyl, C3-C12 branched alkyl, C3-C12 cyclic alkyl, C3-C12 branched alkoxy, C3-C12 cyclic alkoxy, C3 C12 branched thioalkyl, C3 C12 cyclic thioalkyl or C 12 non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, wherein the substituents of the compound of formula I can be independently selected from nitrile and/or (P=0)R2, wherein R is independently selected from a C1-C6 linear alkyl, C1-C6 alkoxy, C1-C6 thioalkyl, C3-C6 branched alkyl, C3-C6 cyclic alkyl, C3-C6 branched alkoxy, C3-C6 cyclic alkoxy, C3-C6 branched thioalkyl, C3 C6 cyclic thioalkyl or C ₆ non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, which comprises 8 to 14 non-hetero aromatic rings, wherein the 8 to 14 non-hetero aromatic rings are 6- member non-hetero aromatic rings.

According to one embodiment a compound according to formula I is provided, wherein the substituents of Ar ² can be independently selected from nitrile and/or (P=0)R ₂ , wherein R is independently selected from a C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3-C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3 C20 cyclic thioalkyl or C6-C20 non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, wherein the substituents of of Ar ² can be independently selected from nitrile and/or (P=0)R ₂ , wherein R is independently selected from a C1-C12 linear alkyl, C1-C12 alkoxy, C1-C12 thioalkyl, C3-C12

branched alkyl, C3-C12 cyclic alkyl, C3-C12 branched alkoxy, C3-C12 cyclic alkoxy, C3-C12 branched thioalkyl, C3 C12 cyclic thioalkyl or C 12 non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, wherein the substituents of of Ar ² can be independently selected from nitrile and/or (P=0)R2, wherein R is independently selected from a C1-C6 linear alkyl, C1-C6 alkoxy, C1-C6 thioalkyl, C3-C6 branched alkyl, C3-C6 cyclic alkyl, C3-C6 branched alkoxy, C3-C6 cyclic alkoxy, C3-C6 branched thioalkyl, C3-C6 cyclic thioalkyl or C ₆ non-hetero aryl, wherein R can be the same or different.

According to one embodiment a compound according to formula I is provided, wherein Ar ¹ comprises no-hetero atom.

Compounds that are superimposable on its mirror image, and excluded from compounds of formula I, are for example selected from the group comprising compounds SI to S4:

(si)l (S2JL

Compounds that asre superimposable on its mirror image are for example compounds with a molecular formula through which a plane of symmetry can be drawn. A plane of symmetry is an imaginary plane that bisects a molecule into halves that are mirror images of each other. Such plane of symmetry is depicted in compound strictures (SI -4) by a dashed line.

According to one embodiment the compounds SI, S2 and S3, or SI to S4 are excluded from formula I:

 X ¹ to X ²⁰ are independently selected from C-H, C- R ¹ , C-Z, and/or at least two of X ¹ to X ⁵ , X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated non-hetero aromatic ring, and wherein at least one X ¹ to X ²⁰ is selected from C-Z;

R ¹ is selected from -NR ² R ³ or -BR ² R ³ ;

R ² and R ³ are independently selected C ₆ -24 aryl;

Z is a substituent of formula II: is independently selected from substituted or unsubstituted C ₆ -C60 aryl, wherein the substituents of C ₆ -C60 aryl are independently selected from linear Ci-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3 12 fluorinated alkyl, branched C3 12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR, (P=0)R ₂ ;

are independently selected from:

- formula I, with the exception that X ¹ to X ²⁰ are not C-Z,

- substituted or unsubstituted C ₆ -60 aryl, and substituted or unsubstituted C2-C60 heteroaryl;

wherein the substituents of the C ₆ -60 aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy; nitrile; OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

is independently selected from a C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3- C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 aryl; is 1 or 2;

is selected from 0, 1, 2 or 3; wherein none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring; wherein compounds of formula I that are superimposable on its mirror image are excluded, and wherein compounds of formula I, wherein Ar ¹ and Ar ² are identical, are excluded.

According to one embodiment a compound, for use as a layer material for an organic electronic device, accordin to formula I is provided:

wherein

X ¹ to X ²⁰ are independently selected from C-H, C- R ¹ , C-Z, and/or at least two of X ¹ to X ⁵ ,

X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated non-hetero aromatic ring, and wherein at least one X ¹ to X ²⁰ is selected from C-Z;

R ¹ is selected from -NR ² R ³ or -BR ² R ³ ;

R ² and R ³ are independently selected C ₆ -24 aryl;

Z is a substituent of formula II: wherein

Ar ¹ is independently selected from substituted or unsubstituted C ₆ -C60 aryl, wherein the substituents of C ₆ -C60 aryl are independently selected from linear C _1-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3-12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, SR,

(P=0)R ₂ ;

Ar ² are independently selected from:

- formula I, with the exception that X ¹ to X ²⁰ are not C-Z,

- substituted or unsubstituted C ₆ -60 aryl, and substituted or unsubstituted C2-C60 heteroaryl;

wherein the substituents of the C ₆ -60 aryl are independently selected from Ci_ C20 linear alkyl, C3-C20 branched alkyl or C3-C20 cyclic alkyl; C1-C20 linear alkoxy, C3 C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy; nitrile; OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20

thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3- C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, C6-C20 aryl; n is 1 or 2;

m is selected from 0, 1, 2 or 3; wherein

none of the non-hetero aromatic rings A, B, C and D are connected via a single bond to a triazine ring; wherein compounds of formula I that are superimposable on its mirror image are excluded, wherein compounds of formula I, wherein Ar ¹ and Ar ² are identical, are excluded; and wherein Z comprises at least 4 C ₆ aryl rings, or preferably Z comprises at least 4 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to another embodiment Z comprises at least 5 C ₆ aryl rings, or preferably Z comprises at least 5 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to another embodiment Z comprises at least 6 C ₆ aryl rings, or preferably Z comprises at least 6 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to another embodiment Z comprises at least 7 C ₆ aryl rings, or preferably Z comprises at least 7 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to another embodiment Z comprises at least 8 C ₆ aryl rings, or preferably Z comprises at least 8 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to another embodiment Z comprises at least 9 C ₆ aryl rings, or preferably Z comprises at least 9 C ₆ aryl rings and at least one 6 member N-hetero aryl ring. According to another embodiment Z comprises at least 10 C ₆ aryl rings, or preferably Z comprises at least 10 C ₆ aryl rings and at least one 6 member N-hetero aryl ring.

According to an aspect the layer material can be an organic semiconductor layer, which is used for an organic electronic device. For example the organic electronic device can be an OLED or there like.

According to one embodiment of formula I, wherein the unsubstituted or substituted A, B, C and D non-hetero arylene rings, wherein at least one of the A, B, C and D non-hetero arylene rings is substituted by C-Z, are bonded each via a single bond to an ethylene group forming the substituted tetraarylethylene compound (TAE) of formula I.

According to one embodiment of formula II, Ar ¹ and Ar ² are bonded via a single bond.

The compounds represented by formula 1 have strong electron transport characteristics to increase charge mobility and/or stability and thereby to improve luminance efficiency, voltage characteristics, and/or life-span characteristics.

The compounds represented by formula 1 have high electron mobility and a low operating voltage.

The organic semiconductor layer may be non-emissive.

In the context of the present specification the term "essentially non-emissive" or "non- emitting" means that the contribution of the compound or layer to the visible emission spectrum from the device is less than 10 %, preferably less than 5 % relative to the visible emission spectrum. The visible emission spectrum is an emission spectrum with a wavelength of about > 380 nm to about < 780 nm.

Preferably, the organic semiconductor layer comprising the compound of formula I is essentially non-emissive or non-emitting.

The term "free of, "does not contain", "does not comprise" does not exclude impurities which may be present in the compounds prior to deposition. Impurities have no technical effect with respect to the object achieved by the present invention.

The operating voltage, also named U, is measured in Volt (V) at 10 milliAmpere per square centimeter (mA/cm2).

The candela per Ampere efficiency, also named cd/A efficiency is measured in candela per ampere at 10 milliAmpere per square centimeter (mA/cm2).

The external quantum efficiency, also named EQE, is measured in percent (%). The color space is described by coordinates CIE-x and CIE-y (International Commission on Illumination 1931). For blue emission the CIE-y is of particular importance. A smaller CIE-y denotes a deeper blue color.

The highest occupied molecular orbital, also named HOMO, and lowest unoccupied molecular orbital, also named LUMO, are measured in electron volt (eV).

The term "OLED", "organic light emitting diode", "organic light emitting device", "organic optoelectronic device" and "organic light-emitting diode" are simultaneously used and have the same meaning.

The term "transition metal" means and comprises any element in the d-block of the periodic table, which comprises groups 3 to 12 elements on the periodic table.

The term "group III to VI metal" means and comprises any metal in groups III to VI of the periodic table.

The term "life-span" and "lifetime" are simultaneously used and have the same meaning.

As used herein,„weight percent",„wt.-%",„percent by weight",„% by weight", and variations thereof refer to a composition, component, substance or agent as the weight of that composition, component, substance or agent of the respective electron transport layer divided by the total weight of the composition thereof and multiplied by 100. It is understood that the total weight percent amount of all components, substances or agents of the respective electron transport layer are selected such that it does not exceed 100 wt.-%.

As used herein,„volume percent",„vol.-%",„percent by volume",„% by volume", and variations thereof refer to an elemental metal, a composition, component, substance or agent as the volume of that elemental metal, component, substance or agent of the respective electron transport layer divided by the total volume of the respective electron transport layer thereof and multiplied by 100. It is understood that the total volume percent amount of all elemental metal, components, substances or agents of the respective cathode electrode layer are selected such that it does not exceed 100 vol.-%.

All numeric values are herein assumed to be modified by the term "about", whether or not explicitly indicated. As used herein, the term "about" refers to variation in the numerical quantity that can occur.

Whether or not modified by the term„about", the claims include equivalents to the quantities.

It should be noted that, as used in this specification and the appended claims, the singular forms„a",„an", and„the" include plural referents unless the content clearly dictates otherwise. The anode electrode and cathode electrode may be described as anode electrode / cathode electrode or anode electrode / cathode electrode or anode electrode layer / cathode electrode layer.

According to another aspect, an organic optoelectronic device comprises an anode layer and a cathode layer facing each other and at least one organic semiconductor layer between the anode layer and the cathode layer, wherein the organic semiconductor layer comprises or consist of the compound of formula I.

According to yet another aspect, a display device comprising the organic electronic device, which can be an organic optoelectronic device, is provided.

In the present specification, when a definition is not otherwise provided, an "alkyl group" may refer to an aliphatic hydrocarbon group. The alkyl group may refer to "a saturated alkyl group" without any double bond or triple bond.

The alkyl group may be a Ci to C20 alkyl group, or preferably a Ci to C12 alkyl group. More specifically, the alkyl group may be a Ci to C20 alkyl group, or preferably a Ci to C10 alkyl group or a Ci to C ₆ alkyl group. For example, a Ci to C ₄ alkyl group comprises 1 to 4 carbons in alkyl chain, and may be selected from methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec- butyl, and t-butyl.

Specific examples of the alkyl group may be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a t-butyl group, a pentyl group, a hexyl group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and the like.

In the present specification, when a definition is not otherwise provided, R is

independently selected from C1-C20 linear alkyl, C1-C20 alkoxy, C1-C20 thioalkyl, C3-C20 branched alkyl, C3-C20 cyclic alkyl, C3-C20 branched alkoxy, C3-C20 cyclic alkoxy, C3-C20 branched thioalkyl, C3-C20 cyclic thioalkyl, non-hetero C6-C20 aryl.

Preferably R can be independently selected from C1-C10 linear alkyl, C1-C10 alkoxy, C1-C10 thioalkyl, C3-C10 branched alkyl, C3-C10 cyclic alkyl, C3-C10 branched alkoxy, C3-C10 cyclic alkoxy, C3-C10 branched thioalkyl, C3-C10 cyclic thioalkyl, non-hetero C ₆ -Ci8 aryl.

Further preferred R can be individually selected from a C1-C3 linear alkyl, C ₆ -Ci8 aryl.

In the present specification "arylene group" may refer to a group comprising at least one hydrocarbon aromatic moiety, and all the elements of the hydrocarbon aromatic moiety may have p-orbitals which form conjugation, for example a phenyl group, a naphtyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluorenyl group and the like. The arylene group may include a monocyclic, polycyclic or fused ring polycyclic (i.e., rings sharing adjacent pairs of carbon atoms) functional group.

The term "heteroarylene" may refer to aromatic heterocycles with at least one heteroatom, and all the elements of the hydrocarbon heteroaromatic moiety may have p-orbitals which form conjugation.

The heteroatom may be selected from N, O, S, B, Si, P, Se, preferably from N, O and S.

The term "heteroarylene" as used herewith shall encompass pyridine, quinoline, quinazoline, pyridine, triazine, benzimidazole, benzothiazole, benzo[4,5]thieno[3,2-d]pyrimidine, carbazole, xanthene, phenoxazine, benzoacridine, dibenzoacridine and the like.

In the present specification, the single bond refers to a direct bond.

In the present specification, when a definition is not otherwise provided, X ¹ to X ²⁰ are independently selected from C-H, C- R ¹ , C-Z, and/or at least two of X ¹ to X ⁵ , X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated non-hetero aromatic ring, and wherein at least one X ¹ to X ²⁰ is selected from C- Z.

Further preferred, X ¹ to X ²⁰ can be independently selected from C-H, C- R ¹ , C-Z, and/or at least two of X ¹ to X ⁵ , X ⁶ to X ¹⁰ , X ¹¹ to X ¹⁵ , X ¹⁶ to X ²⁰ , which are connected to each other by a chemical bond, are bridged to form an annelated aromatic ring, and one X ¹ to X ²⁰ is C-Z.

In addition preferred, X ¹ to X ²⁰ can be independently selected from C-H, C-Z, and at least one X ¹ to X ²⁰ is C-Z.

Also preferred, X ¹ to X ²⁰ can be independently selected from C-H, C-Z, and at least one X ¹ to X ²⁰ is C-Z.

In the present specification, when a definition is not otherwise provided, R ¹ is selected from -NR ² R ³ or -BR ² R ³ ; and R ² and R ³ are independently selected non-hetero C ₆ -24 aryl.

Further preferred, X ¹ to X ²⁰ in formula I can be free of C-R ¹ .

In the present specification, when a definition is not otherwise provided, Ar ¹ is

independently selected from substituted or unsubstituted C ₆ -C60 non-hetero aryl, wherein the substituents of non-hetero C ₆ -C60 aryl are independently selected from linear Ci-20 alkyl, branched C3-20 alkyl or C3-20 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3-12 fluorinated alkyl, branched C3-12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, and SR.

Preferably Ar ¹ can be independently selected from substituted or unsubstituted non-hetero C ₆ -Ci8 non-hetero aryl, wherein the substituents of non-hetero C ₆ -Ci8 aryl are independently selected from linear Ci-io alkyl, branched C3-10 alkyl or C3-10 cyclic alkyl, linear Ci-12 fluorinated alkyl, linear Ci-12 fluorinated alkoxy, branched C3 12 fluorinated alkyl, branched C3 12 fluorinated alkoxy, C3-12 cyclic fluorinated alkyl, C3-12 cyclic fluorinated alkoxy, OR, and SR.

Further preferred, Ar ¹ can be independently selected from substituted or unsubstituted non- hetero C6-C12 aryl, wherein the substituents of C6-C12 non-hetero aryl are independently selected from linear C1-3 alkyl, branched C3-5 alkyl, OR, and SR.

In addition preferred, Ar ¹ can be independently selected from unsubstituted C6-C12 non- hetero aryl.

More preferred, Ar ¹ is not substituted.

In the present specification, when a definition is not otherwise provided, Ar ² is

independently selected from:

- formula I, with the exception that X ¹ to X ²⁰ are not C-Z,

- substituted or unsubstituted non-hetero C ₆ -60 non-hetero aryl, wherein the substituents of the C ₆ -60 non-hetero aryl are independently selected from C 1-C20 linear alkyl, C3-C20 branched alkyl or C3- C20 cyclic alkyl; C1-C20 linear alkoxy, C3-C20 branched alkoxy; linear fluorinated C1-C12 alkyl, or linear fluorinated C1-C12 alkoxy; C3-C12 branched cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkyl, C3-C12 cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, and (P=0)R ₂ .

Preferably Ar ² can be independently selected from:

- formula I, with the exception that X ¹ to X ²⁰ are not C-Z,

- substituted or unsubstituted non-hetero C12-60 aryl, wherein the substituents of the C12-60 non- hetero aryl are independently selected from C1-C10 linear alkyl, C3-C10 branched alkyl or C3-C10 cyclic alkyl; C1-C10 linear alkoxy, C3-C10 branched alkoxy; linear fluorinated Ci-C ₆ alkyl, or linear fluorinated C1-C6 alkoxy; C3-C6 branched cyclic fluorinated alkyl, C3-C6 cyclic fluorinated alkyl, C ₃ -C ₆ cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, and (P=0)R ₂ .

Further preferred, Ar ² can be independently selected from:

- formula I, with the exception that X ¹ to X ²⁰ are not C-Z,

- substituted or unsubstituted non-hetero C18-60 aryl; wherein the substituents of the C18-60 non- hetero aryl are independently selected from C1-C10 linear alkyl, C3-C10 branched alkyl or C3-C10 cyclic alkyl; C1-C10 linear alkoxy, C3-C10 branched alkoxy; linear fluorinated Ci-C ₆ alkyl, or linear fluorinated C1-C6 alkoxy; C3-C6 branched cyclic fluorinated alkyl, C3-C6 cyclic fluorinated alkyl, Cs-Ce cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, and (P=0)R ₂ .

In addition preferred, Ar ² can be independently selected from:

- formula I, wherein X ¹ to X ²⁰ are independently selected from N and C-H, preferably C-H,

- substituted or unsubstituted non-hetero C24-60 aryl; wherein the substituents of the C24-60 non- hetero aryl are independently selected from C1-C10 linear alkyl, C3-C10 branched alkyl or C3-C10 cyclic alkyl; C1-C10 linear alkoxy, C3-C10 branched alkoxy; linear fluorinated Ci-C ₆ alkyl, or linear fluorinated C1-C6 alkoxy; C3-C6 branched cyclic fluorinated alkyl, C3-C6 cyclic fluorinated alkyl, C ₃ -C ₆ cyclic fluorinated alkoxy, nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, and (P=0)R ₂ .

Also preferred, Ar ² can be independently selected from:

- formula I, wherein X ¹ to X ²⁰ are independently selected from N and C-H, preferably C-H,

- substituted or unsubstituted non-hetero C24-60 aryl; wherein the substituents of the C24-60 non- hetero aryl are independently selected from nitrile and (P=0)R ₂ .

In addition preferred Ar ² can be not substituted.

In the present specification, when a definition is not otherwise provided, n is 1 or 2.

Further preferred, n can be 1.

In the present specification, when a definition is not otherwise provided, m is selected from 1, 2 or 3. Further preferred, m can be 1 or 2.

According to one embodiment the compound according to formula I:

- comprises at least 8 to 14 non-hetero aromatic rings, preferably at least 9 to 13 non-hetero aromatic rings, further preferred at least 10 to 12 non-hetero aromatic rings; and/or

- comprises at least 8 to 14 non-hetero aromatic 6-member rings, preferably at least 9 to 13 non- hetero aromatic 6-member rings, further preferred at least 10 to 12 non-hetero aromatic 6- member rings; and/or

- is non-superimposable on its mirror image; and/or

- comprises at least one substituent comprising a hetero atom selected from N, O, S and/or at least one substituent of (P=0)R ₂ , -CN, preferably at least one hetero atom N, two or three hetero N atoms, further preferred at least one hetero N, and more preferred at least one substituent selected from (P=0)R ₂ , or -CN and most preferred at least one substituent selected from (P=0)R _2; and/or

- comprises one non-hetero tetraarylethylene group (TAE) only. According to one preferred embodiment the compound according to formula I may comprises at least 8 to 14 non-hetero aromatic rings, preferably at least 9 to 13 non-hetero aromatic rings, further preferred at least 10 to 12 non-hetero aromatic rings.

According to one preferred embodiment the compound according to formula I may comprises at least one of the non-hetero aromatic rings A, B, C and D, wherein at least one aromatic ring thereof is different substituted, further preferred at least two of the non-hetero aromatic rings A, B, C and D of formula I are different substituted.

According to one preferred embodiment the compound according to formula I can be non- superimposable on its mirror image.

According to one preferred embodiment the compound according to formula I may comprises at least one substituent comprising at least one hetero atom selected from N, O, and/or S, preferably at least one N, two or three N atoms.

According to one preferred embodiment the compound according to formula I may comprises at least one substituent selected from nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ .

According to one preferred embodiment the compound according to formula I may comprises at least one hetero atom selected from N, O, and/or S, and at least one substituent selected from nitrile, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ .

According to one preferred embodiment the compound according to formula I may at least one substituent comprising at least N and in addition at least one hetero atom selected from N, O, and/or S, and at least one substituent selected from nitrile, and/or (P=0)R ₂ .

According to one preferred embodiment the compound according to formula I may comprises one non-hetero tetraarylethylene group (TAE) only.

According to one preferred embodiment the compound according to formula I may comprises at least two non-hetero tetraarylethylene group (TAE).

Non-hetero tetraarylethylene (TAE) group means that none of the aryl substituents at the ethylene comprises a hetero atom, which is an atom different from carbon or hydrogen.

Hetero tetraarylethylene (TAE) group means that at least one of the aryl substituents at the ethylene comprises at least one hetero atom, which is an atom different from carbon or hydrogen.

The term "C ₆ -arylene ring" means single C ₆ -arylene rings and C ₆ -arylene rings which form condensed ring systems. For example, a naphthalene group would be counted as two C ₆ -arylene rings. According to another embodiment of formula I, wherein the compound of formula 1 comprises at least 8 to 14 non-hetero 6-member aromatic rings and is free of a hetero atom.

According to another embodiment, wherein the compound of formula I may have a dipole moment of about > 0 and about < 3 Debye, preferably about > 0 and about < 2 Debye.

Preferably, the dipole moment of the compound of formula 1 may be selected > 0 and < 1 Debye, further preferred > 0 and < 0.8 Debye, also preferred > 0 and < 0.4 Debye.

Surprisingly, it has been found that particularly high conductivity and low operating voltage of an organic semiconductor layer comprising compounds of formula I may be obtained when the dipole moment of compound for formula I is selected in this range.

The dipole moment \μ \ of a molecule containing N atoms is given by:

where q, and are the partial charge and position of atom in the molecule. The dipole moment is determined by a semi-empirical molecular orbital method. The partial charges and atomic positions in the gas phase are obtained using the hybrid functional B3LYP with a 6-31G* basis set as implemented in the program package TURBOMOLE V6.5. If more than one conformation is viable, the conformation with the lowest total energy is selected to determine the dipole moment.

According to another embodiment, the reduction potential of the compound of formula I may be selected more negative than -1.9 V and less negative than -2.6 V against Fc/Fc ⁺ in tetrahydrofuran, preferably more negative than -2 V and less negative than -2.5 V.

The reduction potential may be determined by cyclic voltammetry with potentiostatic device Metrohm PGSTAT30 and software Metrohm Autolab GPES at room temperature. The redox potentials are measured in an argon de-aerated, anhydrous 0.1M THF solution of the compound of formula I, under argon atmosphere, with 0.1M tetrabutylammonium hexafluorophosphate as supporting electrolyte, between platinum working electrodes and with an Ag/AgCl pseudo-standard electrode (Metrohm Silver rod electrode), consisting of a silver wire covered by silver chloride and immersed directly in the measured solution, with the scan rate 100 mV/s. The first run is done in the broadest range of the potential set on the working electrodes, and the range is then adjusted within subsequent runs appropriately. The final three runs are done with the addition of ferrocene (in 0.1M concentration) as the standard. The average of potentials corresponding to cathodic and anodic peak of the compound is determined through subtraction of the average of cathodic and anodic potentials observed for the standard Fc ⁺ /Fc redox couple.

Particularly good electron injection and/or electron transport into the emission layer and/or stability may be achieved if the reduction potential is selected in this range.

According to another embodiment the compound of formula I may have a glass transition temperature Tg of about > 105° C and about < 380° C, preferably about > 110° C and about < 350° C, further preferred about > 150° C and about < 320° C.

According to another embodiment the compound of formula I may have a glass transition temperature Tg of about > 105° C and about < 150° C.

The glass transition temperature is measured under nitrogen and using a heating rate of 10 K per min in a Mettler Toledo DSC 822e differential scanning calorimeter as described in DIN EN ISO 11357, published in March 2010.

According to another embodiment the compound of formula I may have a rate onset temperature T _R0 of about > 150° C and < 400° C, preferably about > 180° C and about < 380° C.

Weight loss curves in TGA (thermo gravimetric analysis) are measured by means of a Mettler Toledo TGA-DSC 1 system, heating of samples from room temperature to 600°C with heating rate 10 K/min under a stream of pure nitrogen. 9 to 11 mg sample are placed in a 100 Mettler Toledo aluminum pan without lid. The temperature is determined at which 0.5 wt.-% weight loss occurs.

Room temperature, also named ambient temperature, is 23° C.

The rate onset temperature for transfer into the gas phase is determined by loading 100 mg compound into a VTE source. As VTE source a point source for organic materials is used as supplied by Kurt J. Lesker Company (www.lesker.com) or CreaPhys GmbH (http://www.creaphys.com). The VTE (vacuum thermal evaporation) source temperature is determined through a thermocouple in direct contact with the compound in the VTE source.

The VTE source is heated at a constant rate of 15 K/min at a pressure of 10 ^"7 to 10 ^"8 mbar in the vacuum chamber and the temperature inside the source measured with a thermocouple. Evaporation of the compound is detected with a QCM detector which detects deposition of the compound on the quartz crystal of the detector. The deposition rate on the quartz crystal is measured in Angstrom per second. To determine the rate onset temperature, the deposition rate on a logarithmic scale is plotted against the VTE source temperature. The rate onset is the temperature at which noticeable deposition on the QCM detector occurs (defined as a rate of O.O2A/S. The VTE source is heated and cooled three time and only results from the second and third run are used to determine the rate onset temperature.

The rate onset temperature is an indirect measure of the volatility of a compound. The higher the rate onset temperature the lower is the volatility of a compound.

Surprisingly, it was found that the compounds of formula 1 and the inventive organic electronic devices solve the problem underlying the present invention by being superior over the organic electroluminescent devices and compounds known in the art, in particular with respect to cd/A efficiency, also referred to as current efficiency. At the same time the operating voltage is kept at a similar or even improved level which is important for reducing power consumption and increasing battery life, for example of a mobile display device. High cd/A efficiency is important for high efficiency and thereby increased battery life of a mobile device, for example a mobile display device.

The inventors have surprisingly found that particular good performance can be achieved when using the organic electroluminescent device as a fluorescent blue device.

The specific arrangements mentioned herein as preferred were found to be particularly advantageous.

Likewise, some compounds falling within the scope of the broadest definition of the present invention have surprisingly be found to be particularly well performing with respect to the mentioned property of cd/A efficiency. These compounds are discussed herein to be particularly preferred.

Further an organic optoelectronic device having high efficiency and/or long life-span may be realized.

Hereinafter, a compound for an organic optoelectronic device according to an embodiment is described.

A compound for an organic optoelectronic device according to an embodiment is represented by formula 1 according to the invention.

The compound of the invention of formula 1 may help injection or transport of electrons or increases a glass transition temperature of the compound, and thus luminance efficiency may be increased due to suppression of an intermolecular interaction, and the compound may have a low deposition temperature relative to the molecular weight.

Accordingly, when the compound for an organic optoelectronic device represented by formula 1 forms a film or layer, the compound may optimize injection and transport of holes or electrons and the film or layer durability in the device due to the specific steric shape of the compound of formula 1. Thereby, a better intermolecular arrangement of charge transporting groups may be achieved.

Therefore, when the compound of formula 1 are used for an organic optoelectronic device these compounds may increase luminance efficiency due to rapid injection of electrons into an emission layer. On the other hand, when the compound is mixed with a material having excellent hole injection or transport characteristics to form the emission layer, the compound may also obtain excellent luminance efficiency due to efficient charge injection and formation of excitons.

In addition, excellent electron injection and transport characteristics of the compound for an organic optoelectronic device represented by formula 1 may be obtained. In addition, the compound of formula 1 may still maintain excellent electron injection and transport characteristics even when used to from an electron injection auxiliary layer or to form an emission layer as a mixture with a compound having excellent hole characteristics.

According to one embodiment of the compound according to formula I:

- the Ar ¹ group may comprises at least 1 to 3 non-hetero aromatic 6 membered rings, preferably 1 or 2 non-hetero aromatic 6 member rings; and/or

- the Ar ² group may comprises 1 to 9 non-hetero aromatic 6 membered rings, preferably 2 to 8 non-hetero aromatic 6 membered rings, further preferred 3 to 6 non-hetero aromatic 6 membered rings; in addition preferred 4 or 5 non-hetero aromatic 6 membered rings; and/or

- at least one non-hetero C ₆ to C ₁₈ arylene, preferably at least one non-hetero C ₆ or C ₁₂ arylene, is annelated to at least on non-hetero aromatic ring A, B, C and D of formula (I).

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H, C- R ¹ , C-Z,

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

R ¹ is selected from -NR ² R ³ or -BR ² R ³ ;

R ² and R ³ are independently selected C ₆ -i6 non-hetero aryl;

Z is a substituent of formula II:

wherein

Ar ¹ is independently selected from substituted or unsubstituted non-hetero C ₆ -i8 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

Ar ² are independently selected from substituted or unsubstituted non-hetero C12-60 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear Ci- C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 non-hetero aryl;

n is selected from 1 or 2;

m is selected from 1 , 2 or 3, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H, C- R ¹ , C-Z,

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

R ¹ is selected from -NR ² R ³ or -BR ² R ³ ;

R ² and R ³ are independently selected C ₆ -i6 non-hetero aryl;

Z is a substituent of formula II: independently selected from substituted or unsubstituted non-hetero C ₆ -i8 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; Ar ² are independently selected from substituted or unsubstituted non-hetero C12-60 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear Ci- C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 non-hetero aryl;

n is 1;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ²⁰ are independently selected from C-H and C-Z,

wherein at least one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II: wherein

Ar ¹ is independently selected from substituted or unsubstituted non-hetero C ₆ -i8 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

Ar ² are independently selected from substituted or unsubstituted non-hetero C 12-52 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl, linear C1-C10 alkoxy, linear Ci- C10 thioalkyl, a branched C3-C10 alkyl, branched C3-C10 alkoxy, branched C3-C10 thioalkyl, C ₆ -i2 non-hetero aryl;

n is selected from 1 or 2;

m is selected from 1 or 2, preferably 1. According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: (Π),

wherein

Ar ¹ is independently selected from substituted or unsubstituted non-hetero C ₆ -i8 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

Ar ² are independently selected from substituted or unsubstituted non-hetero C 12-52 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl, linear C1-C10 alkoxy, linear Ci- C10 thioalkyl, a branched C3-C10 alkyl, branched C3-C10 alkoxy, branched C3-C10 thioalkyl, C ₆ -i2 non-hetero aryl;

n is selected from 1 or 2;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: wherein

Ar ¹ is independently selected from unsubstituted non-hetero C ₆ -i8 aryl,

Ar ² is independently selected from substituted or unsubstituted non-hetero C 12-52 aryl, wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl, linear C1-C10 alkoxy, linear Ci- C10 thioalkyl, a branched C3-C10 alkyl, branched C3-C10 alkoxy, branched C3-C10 thioalkyl, C ₆ -i2 non-hetero aryl;

n is selected from 1 ;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: wherein

Ar ¹ is independently selected from unsubstituted C ₆ -i8 aryl,

Ar ² is independently selected from substituted or unsubstituted non-hetero C 12-52 aryl, wherein the substituents are independently selected from nitrile and (P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl, C ₆ -i2 non-hetero aryl;

n is selected from 1 ;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: wherein

Ar ¹ is independently selected from unsubstituted C ₆ -i8 aryl,

Ar ² is independently selected from substituted or unsubstituted non-hetero C 12-48 aryl, wherein the substituents are independently selected from nitrile and

(P=0)R ₂ ;

R is independently selected from a linear Ci-Cio alkyl, C ₆ -i2 non-hetero aryl; n is selected from 1 ;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II:

^Ar1 H ^A ^ ) _m ^m (II),

wherein

Ar ¹ is independently selected from unsubstituted C ₆ -i8 aryl,

Ar ² is independently selected from substituted or unsubstituted non-hetero Ci ₂ -48 wherein the substituents are independently selected from nitrile and

(P=0)R ₂ ;

R is independently selected from a linear Ci-Cio alkyl;

n is selected from 1 ;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: (Π),

wherein

Ar ¹ is independently selected from unsubstituted C ₆ -i8 aryl,

Ar ² is independently selected from unsubstituted Ci ₂ -48 aryl,

wherein the substituents are independently selected from nitrile and

(P=0)R ₂ ;

R is independently selected from a linear Ci-Cio alkyl;

n is selected from 1 ; m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ²⁰ are independently selected from C-H and C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

is a substituent of formula II: wherein

Ar ¹ is independently selected from unsubstituted C ₆ -i8 non-hetero aryl,

Ar ² is independently selected from substituted C 12-48 non-hetero aryl,

wherein the substituents are independently selected from nitrile and

(P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl;

n is selected from 1 ;

m is selected from 1 or 2, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H, C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II: wherein

Ar ¹ is independently selected from substituted or unsubstituted phenylene, biphenylene, triphenylene or anthracene, preferably phenylene, biphenylene or triphenylene, wherein the substituents are independently selected from nitrile, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

Ar ² are independently selected from substituted or unsubstituted C12-60 aryl,

wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; R is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear Ci-

C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 aryl;

n is selected from 1 or 2, preferably 1;

m is selected from 1, 2 or 3, preferably 1.

According to one embodiment, wherein in formula I:

X ¹ to X ²⁰ are independently selected from C-H, C-Z,

wherein one X ¹ to X ²⁰ is selected from C-Z;

Z is a substituent of formula II:

wherein

Ar ¹ is independently selected from substituted or unsubstituted phenylene, biphenylene, triphenylene or anthracene, preferably phenylene, biphenylene or triphenylene,

wherein the substituents are independently selected from nitrile, fluorinated Ci-Ce alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

Ar ² is independently selected from substituted or unsubstituted C 12-52 aryl,

wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

R is independently selected from a linear C1-C10 alkyl, linear C1-C10 alkoxy, linear Ci- C10 thioalkyl, a branched C3-C10 alkyl, branched C3-C10 alkoxy, , branched C3-C10 thioalkyl, C ₆ -i2 aryl;

n is selected from 1 or 2, preferably 1;

m is selected from 1, 2 or 3, preferably 1.

According to an another embodiment, Z according to formula I may be selected from formula El to E9 :

wherein

Z ¹ to Z ¹⁵ are independently selected from C-H, C- R ¹ , and/or at least two of Z ¹ to Z ⁵ , Z ⁶ to

Z ¹⁰ , Z ¹¹ to Z ¹⁵ , which are connected to each other by a chemical bond, are bridged to form an annelated non-hetero aromatic ring; R ¹ is selected from nitrile, (P=0)R ₂ , -NR ² R ³ or -BR ² R ³ , preferably nitrile or

(P=0)R ₂ ;

R ² and R ³ are independently selected selected from H, linear C1-C20 alkyl, linear C1-C20

alkoxy, linear C1-C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 non-hetero aryl, and preferably C ₆ -i6 non-hetero aryl;

Ar ² is independently selected from substituted or unsubstituted non-hetero C ₆ -60 aryl;

wherein

the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; R is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear Ci- C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 non-hetero aryl;

m is selected from 1, 2 or 3.

According to an another embodiment, Z according to formula I may be selected from formula El to E9 :

wherein

Z ¹ to Z ¹⁵ are independently selected from N, C-H and/or at least two of Z ¹ to Z ⁵ , Z ⁶ to Z ¹⁰ ,

Z ¹¹ to Z ¹⁵ , which are connected to each other by a chemical bond, are bridged to form an annelated non-hetero aromatic ring;

Ar ² is independently selected from substituted or unsubstituted non-hetero C ₆ -60 aryl;

wherein

the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; R is independently selected from a linear Ci-C ₂ o alkyl, linear Ci-C ₂ o alkoxy, linear Ci-C ₂ o thioalkyl, a branched C3-C ₂ o alkyl, branched C3-C ₂ o alkoxy, branched C3-C ₂ o thioalkyl, C ₆ -20 non-hetero aryl;

m is selected from 1, 2 or 3.

According to an another embodiment, Z according to formula I may be selected from formula El to E9 :

wherein

Z ¹ to Z ¹⁵ are C-H;

Ar ² is independently selected from substituted or unsubstituted non-hetero C ₆ -60 aryl;

wherein the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; R is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear C1-C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, C ₆ -20 non-hetero aryl;

m is selected from 1 or 2.

According to an another embodiment, Z according to formula I may be selected from formu

wherein

Z ¹ to Z ¹⁵ is C-H;

Ar ² is independently selected from substituted or unsubstituted non-hetero C ₆ -60 aryl, preferably independently unsubstituted C ₆ -60 aryl; wherein

the substituents are independently selected from nitrile, di-alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ , S1R3, (S=0)R, (S=0) ₂ R, (P=0)R ₂ ; R is independently selected from a linear C1-C10 alkyl, linear C1-C10 alkoxy, linear C1-C10 thioalkyl, a branched C3-C10 alkyl, branched C3-C10 alkoxy, branched C3-C10 thioalkyl, C ₆ -i2 non-hetero aryl;

m is selected from 1 or 2.

According to one embodiment, wherein Ar ² in formula I are selected from formula Fl to

F4:

(Fl), wherein

are independently selected from C-H, C- R ³ , and/or at least two of Y ¹ to Y ⁵ , which are connected to each other by a chemical bond, are bridged to form an annelated non- hetero aromatic ring,

wherein R ³ is independently selected from a linear C1-C20 alkyl, linear C1-C20 alkoxy, linear C1-C20 thioalkyl, a branched C3-C20 alkyl, branched C3-C20 alkoxy, branched C3-C20 thioalkyl, substituted or unsubstituted non-hetero C ₆ -20 aryl, wherein the substituents are independently selected from nitrile, di- alkyl phosphine oxide, di-aryl phosphine oxide, fluorinated Ci-C ₆ alkyl or fluorinated Ci-C ₆ alkoxy, OR, SR, (C=0)R, (C=0)NR ₂ ,

SiR ₃ , (S=0)R, (S=0) ₂ R, (P=0)R ₂ ;

According to one embodiment, wherein Ar ² in formula I are selected from formula Fl :

wherein

Y ¹ to Y ⁵ are independently selected from C-H, C-R ³ , and/or at least two of Y ¹ to Y ⁵ , which are connected to each other by a chemical bond, are bridged to form an annelated non- hetero aromatic ring,

wherein R ³ is independently selected from substituted or unsubstituted non-hetero

C6-20 aryl,

wherein the substituents are independently selected from nitrile, (P=0)R ₂ . According to an embodiment, wherein Z of formula I may be selected from formula El to

E9.

According to an embodiment of formula I, Ar ² may comprise at least one nitrile and/or phosphine oxide substituent.

According to an embodiment, of formula I Ar ² may comprise at least one substituted or unsubstituted 1,1,2,2-Tetraphenylethylene group, preferably an unsubstituted 1,1,2,2- Tetraphenylethylene group.

According to a preferred embodiment, wherein the compounds of Formula I can be selected from Gl to G34:

42

Particularly good performance characteristics are obtained when the compound of formula 1 is chosen from this selection.

Anode

A material for the anode may be a metal or a metal oxide, or an organic material, preferably a material with work function above about 4.8 eV, more preferably above about 5.1 eV, most preferably above about 5.3 eV. Preferred metals are noble metals like Pt, Au or Ag, preferred metal oxides are transparent metal oxides like ITO or IZO which may be advantageously used in bottom-emitting OLEDs having a reflective cathode.

In devices comprising a transparent metal oxide anode or a reflective metal anode, the anode may have a thickness from about 50 nm to about 100 nm, whereas semitransparent metal anodes may be as thin as from about 5 nm to about 15 nm, and non-transparent metal anodes may have a thickness from about 15 nm to about 150nm.

Hole injection layer (HIL)

The hole injection layer may improve interface properties between the anode and an organic material used for the hole transport layer, and is applied on a non-planarized anode and thus may planarize the surface of the anode. For example, the hole injection layer may include a material having a median value of the energy level of its highest occupied molecular orbital (HOMO) between the work function of the anode material and the energy level of the HOMO of the hole transport layer, in order to adjust a difference between the work function of the anode and the energy level of the HOMO of the hole transport layer.

When the hole transport region comprises a hole injection layer 36, the hole injection layer may be formed on the anode by any of a variety of methods, for example, vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, or the like.

When hole injection layer is formed using vacuum deposition, vacuum deposition conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed and for example, vacuum deposition may be performed at a temperature of about 100 °C to about 500 °C, a pressure of about 10 ^"6 Pa to about 10 ^"1 Pa, and a deposition rate of about 0.1 to about 10 nm/sec, but the deposition conditions are not limited thereto.

When the hole injection layer is formed using spin coating, the coating conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed. For example, the coating rate may be in the range of about 2000 rpm to about 5000 rpm, and a temperature at which heat treatment is performed to remove a solvent after coating may be in a range of about 80 °C to about 200 °C, but the coating conditions are not limited thereto.

The hole injection layer may further comprise a p-dopant to improve conductivity and/or hole injection from the anode. The hole injection layer may comprise a compound of formula 1.

In another embodiment the hole injection layer may consist of a compound of formula 1. p-dopant

In another aspect, the p-dopant may be homogeneously dispersed in the hole injection layer.

In another aspect, the p-dopant may be present in the hole injection layer in a higher concentration closer to the anode and in a lower concentration closer to the cathode.

The p-dopant may be one of a quinone derivative or a radialene compound but not limited thereto. Non- limiting examples of the p-dopant are quinone derivatives such as

tetracyanoqumonedimethane (TCNQ), 2,3 ,5 ,6-tetrafluoro-tetracyano- 1 ,4-benzoquinonedimethane (F4-TCNQ), 4,4',4"-((lE, E,l"E)-cyclopropane-l,2,3-triylidenetris(cyanomethanylyliden e))- tris(2,3 ,5 ,6-tetrafluorobenzonitrile).

Hole transport layer (HTL)

Conditions for forming the hole transport layer and the electron blocking layer may be defined based on the above-described formation conditions for the hole injection layer.

A thickness of the hole transport part of the charge transport region may be from about 10 nm to about 1000 nm, for example, about 10 nm to about 100 nm. When the hole transport part of the charge transport region comprises the hole injection layer and the hole transport layer, a thickness of the hole injection layer may be from about 10 nm to about 1000 nm, for example about 10 nm to about 100 nm and a thickness of the hole transport layer may be from about 5 nm to about 200 nm, for example about 10 nm to about 150 nm. When the thicknesses of the hole transport part of the charge transport region, the HIL, and the HTL are within these ranges, satisfactory hole transport characteristics may be obtained without a substantial increase in operating voltage.

Hole transport matrix materials used in the hole transport region are not particularly limited. Preferred are covalent compounds comprising a conjugated system of at least 6 delocalized electrons, preferably organic compounds comprising at least one aromatic ring, more preferably organic compounds comprising at least two aromatic rings, even more preferably organic compounds comprising at least three aromatic rings, most preferably organic compounds comprising at least four aromatic rings. Typical examples of hole transport matrix materials which are widely used in hole transport layers are polycyclic aromatic hydrocarbons, triarylene amine compounds and heterocyclic aromatic compounds. Suitable ranges of frontier orbital energy levels of hole transport matrices useful in various layer of the hole transport region are well-known. In terms of the redox potential of the redox couple HTL matrix/ cation radical of the HTL matrix, the preferred values (if measured for example by cyclic voltammetry against ferrocene/ferrocenium redox couple as reference) may be in the range 0.0 - 1.0 V, more preferably in the range 0.2 - 0.7 V, even more preferably in the range 0.3 - 0.5 V.

The hole transport layer may comprise a compound of formula 1.

In another embodiment the hole transport layer may consist of a compound of formula 1. Buffer layer

The hole transport part of the charge transport region may further include a buffer layer. Buffer layer that can be suitable used are disclosed in US 6 140 763, US 6 614 176 and in US2016/248022.

The buffer layer may compensate for an optical resonance distance of light according to a wavelength of the light emitted from the EML, and thus may increase efficiency. The buffer layer may comprise a compound of formula 1.

In another embodiment the buffer layer may consist of a compound of formula 1.

Emission layer (EML)

The emission layer may be formed on the hole transport region by using vacuum deposition, spin coating, casting, LB method, or the like. When the emission layer is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the hole injection layer, though the conditions for the deposition and coating may vary depending on the material that is used to form the emission layer. The emission layer may include an emitter host (EML host) and an emitter dopant (further only emitter).

Emitter host

According to another embodiment, the emission layer comprises compound of formula 1 as emitter host.

The emitter host compound has at least three aromatic rings, which are independently selected from carbocyclic rings and heterocyclic rings. Other compounds that can be used as the emitter host is an anthracene matrix compound represented by formula 400 below:

Formula 400

In formula 400, Arm and An 12 may be each independently a substituted or unsubstituted C6-C ₆ o arylene group; An 13 to Arii6 may be each independently a substituted or unsubstituted C1-C10 alkyl group or a substituted or unsubstituted C6-C ₆ o arylene group;

and g, h, i, and j may be each independently an integer from 0 to 4.

In some embodiments, Arm and An 12 in formula 400 may be each independently one of a phenylene group, a naphthalene group, a phenanthrenylene group, or a pyrenylene group; or

a phenylene group, a naphthalene group, a phenanthrenylene group, a fluorenyl group, or a pyrenylene group, each substituted with at least one of a phenyl group, a naphthyl group, or an anthryl group.

In formula 400, g, h, i, and j may be each independently an integer of 0, 1, or 2.

In formula 400, An 13 to Ani6may be each independently one of

- a C1-C10 alkyl group substituted with at least one of a phenyl group, a naphthyl group, or an anthryl group;

- a phenyl group, a naphthyl group, an anthryl group, a pyrenyl group, a phenanthrenyl group, or a fluorenyl group;

- a phenyl group, a naphthyl group, an anthryl group, a pyrenyl group, a phenanthrenyl group, or a fluorenyl group, each substituted with at least one of a deuterium atom, a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxyl group or a salt thereof,

- a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof,

- a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a phenyl group, a naphthyl group, an anthryl group, a pyrenyl group, a phenanthrenyl group, or - a fluorenyl group

- formulas 7 or 8

Wherein in the formulas 7 and 8, X is selected form an oxygen atom and a sulfur atom, but embodiments of the invention are not limited thereto.

In the formula 7, any one of Rn to Ri ₄ is used for bonding to Arm. Rii to Ri ₄ that are not used for bonding to Arm and R15 to R20 are the same as Ri to R ₈ .

In the formula 8, any one of R21 to R24 is used for bonding to Arm. R21 to R24 that are not used for bonding to Arm and R25 to R30 are the same as Ri to R ₈ .

Preferably, the EML host comprises between one and three heteroatoms selected from the group consisting of N, O or S. More preferred the EML host comprises one heteroatom selected from S or O.

The emitter host compound may have a dipole moment in the range from about > 0 Debye to about < 2.0 Debye.

Preferably, the dipole moment of the EML host is selected > 0.2 Debye and < 1.45 Debye, preferably > 0.4 Debye and < 1.2 Debye, also preferred > 0.6 Debye and < 1.1 Debye.

The dipole moment is calculated using the optimized using the hybrid functional B3LYP with the 6-31G* basis set as implemented in the program package TURBOMOLE V6.5. If more than one conformation is viable, the conformation with the lowest total energy is selected to determine the dipole moment of the molecules. Using this method, 2-(10-phenyl-9-anthracenyl)- benzo[b]naphtho[2,3-d]furan (CAS 1627916-48-6) has a dipole moment of 0.88 Debye, 2-(6-(10- phenylanthracen-9-yl)naphthalen-2-yl)dibenzo[b,d]thiophene (CAS 1838604-62-8) of 0.89 Debye, 2-(6-(10-phenylanthracen-9-yl)naphthalen-2-yl)dibenzo[b,d]fu ran (CAS 1842354-89-5) of 0.69 Debye, 2-(7-(phenanthren-9-yl)tetraphen-12-yl)dibenzo[b,d]furan (CAS 1965338-95-7) of 0.64 Debye, 4-(4-(7-(naphthalen-l-yl)tetraphen-12-yl)phenyl) dibenzo[b,d] furan (CAS 1965338- 96-8) of 1.01 Debye.

Emitter dopant

The dopant is mixed in a small amount to cause light emission, and may be

generally a material such as a metal complex that emits light by multiple excitation into a triplet or more. The dopant may be, for example an inorganic, organic, or

organic/inorganic compound, and one or more kinds thereof may be used.

The emitter may be a red, green, or blue emitter.

The dopant may be a fluorescent dopant, for example ter-fluorene, the structures are shown below. 4.4'-bis(4-diphenyl amiostyryl)biphenyl (DPAVBI, 2,5,8,11-tetra-tert- butyl perylene (TBPe), and Compound 8 below are examples of fluorescent blue dopants.

Compound 8

The dopant may be a phosphorescent dopant, and examples of the phosphorescent dopant may be an organic metal compound comprising Ir, Pt, Os, Ti, Zr, Hf, Eu, Tb, Tm, Fe, Co, Ni, Ru, Rh, Pd, or a combination thereof. The phosphorescent dopant may be, for example a compound represented by formula Z, but is not limited thereto:

J ₂ MX (Z).

In formula Z, M is a metal, and J and X are the same or different, and are a ligand to form a complex compound with M.

The M may be, for example Ir, Pt, Os, Ti, Zr, Hf, Eu, Tb, Tm, Fe, Co, Ni, Ru, Rh, Pd or a combination thereof, and the J and X may be, for example a bidendate ligand.

Electron transport layer (ETL) According to another embodiment, the organic semiconductor layer comprising a compound of formula 1 is an electron transport layer. In another embodiment the electron transport layer may consist of a compound of formula 1.

For example, an organic light emitting diode according to an embodiment of the present invention comprises at least one electron transport layer, and in this case, the electron transport layer comprises a compound of formula 1 , or preferably of at least one compound of formulae Gl to G50.

In another embodiment, the organic electronic device comprises an electron transport region of a stack of organic layers formed by two or more electron transport layers, wherein at least one electron transport layer comprises a compound of formula 1.

The electron transport layer may include one or two or more different electron transport compounds.

According to another embodiment, a second electron transport layer comprises at least one compound of formula 1 according to the invention and a first electron transport layer comprises a matrix compound, which is selected different to the compound of formula 1 according to the invention, and may be selected from:

- an anthracene based compound or a hetero substituted anthracene based compound, preferably 2-(4-(9, 10-di(naphthalen-2-yl)anthracene-2-yl)phenyl)- 1 -phenyl- 1 H-benzo[d]imidazole and/or N4,N4"-di(naphthalen- 1 -yl)-N4,N4"-diphenyl-[ 1 , Γ :4', 1 "-terphenyl] -4,4"-diamine.

According to another embodiment, a first electron transport layer comprises at least one compound of formula 1 according to the invention and a second electron transport layer comprises a matrix compound, which is selected different to the compound of formula 1 according to the invention, and may be selected from:

- a phosphine oxide based compound, preferably (3-(dibenzo[c,h]acridin-7- yl)phenyl)diphenylphosphine oxide and/or phenyl bis(3-(pyren-l-yl)phenyl)phosphine oxide and/or 3-Phenyl-3H-benzo[b]dinaphtho[2,l-d: ,2 ^' -f]phosphepine-3-oxide; or

- a substituted phenanthroline compound, preferably 2,4,7, 9-tetraphenyl- 1 , 10-phenanthroline or 2,9-di(biphenyl-4-yl)-4,7-diphenyl- 1 , 10-phenanthroline.

According to another embodiment a first electron transport layer comprises at least one compound of formula 1 according to the invention and a second electron transport layer comprises a matrix compound, which is selected different to the compound of formula 1 according to the invention, and may be selected from a phosphine oxide based compound, preferably (3- (dibenzo[c,h]acridin-7-yl)phenyl)diphenylphosphine oxide and/or phenyl bis(3-(pyren-l- yl)phenyl)phosphine oxide and/or 3-Phenyl-3H-benzo[b]dinaphtho[2,l-d: ,2 ^' -fJphosphepine-3- oxide.

According to another embodiment, a first and a second electron transport layers comprise a compound of formula 1, wherein the compound of formula 1 is not selected the same.

The thickness of the first electron transport layer may be from about 0.5 nm to about 100 nm, for example about 2 nm to about 40 nm. When the thickness of the first electron transport layer is within these ranges, the first electron transport layer may have improved electron transport ability without a substantial increase in operating voltage.

A thickness of an optional second electron transport layer may be about 1 nm to about 100 nm, for example about 2 nm to about 20 nm. When the thickness of the electron transport layer is within these ranges, the electron transport layer may have satisfactory electron transporting ability without a substantial increase in operating voltage.

The electron transport layer may further comprise an alkali halide and/or alkali organic complex.

According to another embodiment, the first and second electron transport layers comprise a compound of formula 1 , wherein the second electron transport layer further comprises an alkali halide and/or alkali organic complex.

Alkali halide

Alkali halides, also known as alkali metal halides, are the family of inorganic compounds with the chemical formula MX, where M is an alkali metal and X is a halogen.

M can be selected from Li, Na, Potassium, Rubidium and Cesium.

X can be selected from F, CI, Br and J.

According to various embodiments of the present invention a lithium halide may be preferred. The lithium halide can be selected from the group comprising LiF, LiCl, LiBr and LiJ. However, most preferred is LiF.

The alkali halide is essentially non-emissive or non-emissive.

Alkali organic complex

According to various embodiments of the present invention the organic ligand of the lithium organic complex is a quinolate, a borate, a phenolate, a pyridinolate or a Schiff base ligand;

- preferably the lithium quinolate complex has the formula III, IV or V:

wherein

Ai to A ₆ are same or independently selected from CH, CR, N, O;

R is same or independently selected from hydrogen, halogen, alkyl or arylene or

heteroarylene with 1 to 20 carbon atoms; and more preferred Al to A6 are CH;

- preferably the borate based organic ligand is a tetra(lH-pyrazol-l-yl)borate;

- preferably the phenolate is a 2-(pyridin-2-yl)phenolate, a 2-(diphenylphosphoryl)phenolate, an imidazol phenolates, or 2-(pyridin-2-yl)phenolate and more preferred 2-( 1 -phenyl- 1H- benzo[d]imidazol-2-yl)phenolate;

- preferably the pyridinolate is a 2-(diphenylphosphoryl)pyridin-3-olate.

According to various embodiments of the present invention the organic ligand of the alkali organic complex, preferably of a lithium organic complex, can be a quinolate. Quinolates that can be suitable used are disclosed in WO 2013079217 Al and incorporated by reference.

According to various embodiments of the present invention the organic ligand of the lithium organic complex can be a borate based organic ligand, Preferably the lithium organic complex is a lithium tetra(lH-pyrazol-l-yl)borate. Borate based organic ligands that can be suitable used are disclosed in WO 2013079676 Al and incorporated by reference.

According to various embodiments of the present invention the organic ligand of the lithium organic complex can be a phenolate ligand, Preferably the lithium organic complex is a lithium 2-(diphenylphosphoryl)phenolate. Phenolate ligands that can be suitable used are disclosed in WO 2013079678 Al and incorporated by reference.

Further, phenolate ligands can be selected from the group of pyridinolate, preferably 2- (diphenylphosphoryl)pyridin-3-olate. Pyridine phenolate ligands that can be suitable used are disclosed in JP 2008195623 and incorporated by reference.

In addition, phenolate ligands can be selected from the group of imidazol phenolates, preferably 2-(l-phenyl-lH-benzo[d]imidazol-2-yl)phenolate. Imidazol phenolate ligands that can be suitable used are disclosed in JP 2001291593 and incorporated by reference. Also, phenolate ligands can be selected from the group of oxazol phenolates, preferably 2- (benzo[d]oxazol-2-yl)phenolate. Oxazol phenolate ligands that can be suitable used are disclosed in US 20030165711 and incorporated by reference.

The alkali organic complex may be essentially non-emissive. n-dopant

According to various embodiments, the organic semiconductor layer comprising a compound of formula 1 may further comprise an n-dopant.

Electrically neutral metal complexes suitable as n-dopants may be e.g. strongly reductive complexes of some transition metals in low oxidation state. Particularly strong n-dopants may be selected for example from Cr(II), Mo(II) and/or W(II) guanidinate complexes such as W ₂ (hpp)4, as described in more detail in WO2005/086251.

Electrically neutral organic radicals suitable as n-dopants may be e.g. organic radicals created by supply of additional energy from their stable dimers, oligomers or polymers, as described in more detail in EP 1 837 926 Bl, WO2007/107306, or WO2007/107356. Specific examples of such suitable radicals may be diazolyl radicals, oxazolyl radicals and/or thiazolyl radicals.

In another embodiment, the organic semiconductor layer may further comprise an elemental metal. An elemental metal is a metal in a state of metal in its elemental form, a metal alloy, or a metal cluster. It is understood that metals deposited by vacuum thermal evaporation from a metallic phase, e.g. from a bulk metal, vaporize in their elemental form. It is further understood that if the vaporized elemental metal is deposited together with a covalent matrix, the metal atoms and/or clusters are embedded in the covalent matrix. In other words, it is understood that any metal doped covalent material prepared by vacuum thermal evaporation contains the metal at least partially in its elemental form.

For the use in consumer electronics, only metals containing stable nuclides or nuclides having very long halftime of radioactive decay might be applicable. As an acceptable level of nuclear stability, the nuclear stability of natural potassium can be taken.

In one embodiment, the n-dopant is selected from electropositive metals selected from alkali metals, alkaline earth metals, rare earth metals and metals of the first transition period Ti, V, Cr and Mn. Preferably, the n-dopant is selected from_Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sm, Eu, Tm, Yb; more preferably from Li, Na, K, Rb, Cs, Mg and Yb, even more preferably from Li, Na, Cs and Yb, most preferably from Li, Na and Yb. The n-dopant may be essentially non-emissive.

Electron injection layer (EIL)

According to another aspect of the invention, the organic electroluminescent device may further comprise an electron injection layer between the electron transport layer (first-ETL) and the cathode.

The electron injection layer (EIL) may facilitate injection of electrons from the cathode.

According to another aspect of the invention, the electron injection layer comprises:

(i) an electropositive metal selected from alkali metals, alkaline earth metals and rare earth metals in substantially elemental form, preferably selected from Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Eu and Yb, more preferably from Li, Na, Mg, Ca, Sr and Yb, even more preferably from Li and Yb, most preferably Yb; and/or

(ii) an alkali metal complex and/or alkali metal salt, preferably the Li complex and/or salt, more preferably a Li quinolinolate, even more preferably a lithium 8-hydroxyquinolinolate, most preferably the alkali metal salt and/or complex of the second electron transport layer

(second-ETL) is identical with the alkali metal salt and/or complex of the injection layer. The electron injection layer may include at least one selected from LiF, NaCl, CsF, Li ₂ 0, and BaO.

A thickness of the EIL may be from about 0.1 nm to about 10 nm, or about 0.3 nm to about 9 nm. When the thickness of the electron injection layer is within these ranges, the electron injection layer may have satisfactory electron injection ability without a substantial increase in operating voltage.

The electron injection layer may comprise a compound of formula 1.

Cathode

A material for the cathode may be a metal, an alloy, or an electrically conductive compound that have a low work function, or a combination thereof. Specific examples of the material for the cathode may be lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver (Ag) etc. In order to manufacture a top-emission light-emitting device having a reflective anode deposited on a substrate, the cathode may be formed as a light-transmissive electrode from, for example, indium tin oxide (ITO), indium zinc oxide (IZO) or silver (Ag).

In devices comprising a transparent metal oxide cathode or a reflective metal cathode, the cathode may have a thickness from about 50 nm to about 100 nm, whereas semitransparent metal cathodes may be as thin as from about 5 nm to about 15 nm.

A substrate may be further disposed under the anode or on the cathode. The substrate may be a substrate that is used in a general organic light emitting diode and may be a glass substrate or a transparent plastic substrate with strong mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance.

The hole injection layer may improve interface properties between ITO as an anode and an organic material used for the hole transport layer, and may be applied on a non-planarized ITO and thus may planarize the surface of the ITO.

The hole injection layer may be formed on the anode by any of a variety of methods, for example, vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, or the like.

When hole injection layer is formed using vacuum deposition, vacuum deposition conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed and for example, vacuum deposition may be performed at a temperature of about 100°C to about 500°C, a pressure of about 10 ^"8 torr to about 10 ^"3 torr, and a deposition rate of about 0.01 to about 100 A/sec, but the deposition conditions are not limited thereto.

When the hole injection layer is formed using spin coating, the coating conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed. For example, the coating rate may be in the range of about 2000 rpm to about 5000 rpm, and a temperature at which heat treatment is performed to remove a solvent after coating may be in a range of about 80°C to about 200°C, but the coating conditions are not limited thereto.

Conditions for forming the hole transport layer and the electron blocking layer may be defined based on the above-described formation conditions for the hole injection layer.

A thickness of the hole transport region may be from about 100 A to about 10000 A, for example, about 100 A to about 1000 A. When the hole transport region comprises the hole injection layer and the hole transport layer, a thickness of the hole injection layer may be from about lOOA to about ΙΟ,ΟΟθΑ, for example about 100 A to about 1000 A and a thickness of the hole transport layer may be from about 5θΑ to about 2,ΟΟθΑ, for example about 100 A to about 1500 A. When the thicknesses of the hole transport region, the HIL, and the HTL are within these ranges, satisfactory hole transport characteristics may be obtained without a substantial increase in operating voltage.

A thickness of the emission layer may be about lOOA to about lOOOA, for example about 200A to about 600A. When the thickness of the emission layer is within these ranges, the emission layer may have improved emission characteristics without a substantial increase in a operating voltage.

Next, an electron transport region is disposed on the emission layer.

The electron transport region may include at least one of an electron transport layer and an electron injection layer.

The thickness of the electron transport layer may be from about 20 A to about 1000 A, for example about 30 A to about 300 A. When the thickness of the electron transport layer is within these ranges, the electron transport layer may have improved electron transport auxiliary ability without a substantial increase in operating voltage. .

A thickness of the electron transport layer may be about 100 A to about 1000 A, for example about 150 A to about 500 A. When the thickness of the electron transport layer is within these ranges, the electron transport layer may have satisfactory electron transporting ability without a substantial increase in operating voltage.

In addition, the electron transport region may include an electron injection layer (EIL) that may facilitate injection of electrons from the anode.

The electron injection layer is disposed on an electron transport layer and may play a role of facilitating an electron injection from a cathode and ultimately improving power efficiency and be formed by using any material used in a related art without a particular limit, for example, LiF, Liq, NaCl, CsF, Li ₂ 0, BaO, Yb and the like.

The electron injection layer may include at least one selected from LiF, NaCl, CsF, Li ₂ 0, and BaO.

A thickness of the EIL may be from about 1 A to about 100 A, or about 3 A to about 90 A. When the thickness of the electron injection layer is within these ranges, the electron injection layer may have satisfactory electron injection ability without a substantial increase in operating voltage.

A second electrode may be disposed on the organic layer. A material for the second electrode may be a metal, an alloy, or an electrically conductive compound that have a low work function, or a combination thereof. Specific examples of the material for the second electrode may be lithium (Li, magnesium (Mg), aluminum (Al), aluminum-lithium (Al-LI, calcium

(Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver (Ag) etc. In order to manufacture a top-emission light-emitting device, the second electrode may be formed as a light-transmissive electrode from, for example, indium tin oxide ITO) or indium zinc oxide IZO). The second electrode may be the cathode.

According to another aspect of the invention, a method of manufacturing an organic electroluminescent device is provided, wherein

- on an anode electrode the other layers of a hole injection layer, a hole transport layer, optional an electron blocking layer, an emission layer, optional a hole blocking layer, a first electron transport layer, optional an second electron transport layer, an electron injection layer, and a cathode, are deposited in that order; or

- the layers are deposited the other way around, starting with the cathode.

Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples.

Description of the Drawings

These and/or other aspects and advantages of the present invention will become apparent and more readily appreciated from the following description of the exemplary embodiments, taken in conjunction with the accompanying drawings, of which:

FIG. 1 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention with an emission layer, one electron transport layer and an electron injection layer;

FIG. 2 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention with an emission layer and two electron transport layers;

FIG. 3 is a schematic sectional view of an OLED, according to an exemplary embodiment of the present invention with an emission layer and three electron transport layers;

FIG. 4 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention with an emission layer and one electron transport layer;

FIG. 5 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention with an emission layer and two electron transport layers; FIG. 6 is a schematic sectional view of an OLED, according to an exemplary embodiment of the present invention with an emission layer and three electron transport layers.

Reference will now be made in detail to the exemplary aspects, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The exemplary embodiments are described below, in order to explain the aspects, by referring to the figures.

Herein, when a first element is referred to as being formed or disposed "on" a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between. When a first element is referred to as being formed or disposed "directly on" a second element, no other elements are disposed there between.

The term "contacting sandwiched" refers to an arrangement of three layers whereby the layer in the middle is in direct contact with the two adjacent layers.

The organic light emitting diodes according to an embodiment of the present invention may include a hole transport region; an emission layer; and a first electron transport layer comprising a compound according to formula I.

FIG. 1 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises an emission layer 150, an electron transport layer (ETL) 161 comprising a compound of formula I and an electron injection layer 180, whereby the first electron transport layer 161 is disposed directly on the emission layer 150 and the electron injection layer 180 is disposed directly on the first electron transport layer 161.

FIG. 2 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises an emission layer 150 and an electron transport layer stack (ETL) 160 comprising a first electron transport layer 161 comprising a compound of formula I and a second electron transport layer 162, whereby the second electron transport layer 162 is disposed directly on the first electron transport layer 161.

FIG. 3 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises an emission layer 150 and an electron transport layer stack (ETL) 160 comprising a first electron transport layer 161 that comprises a compound of formula I, a second electron transport layer 162 that comprises a compound of formula I but different to the compound of the first electron transport layer, and a third electron transport layer 163, whereby the second electron transport layer 162 is disposed directly on the first electron transport layer 161 and the third electron transport layer 163 is disposed directly on the first electron transport layer 162.

FIG. 4 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises a substrate 110, a first anode electrode 120, a hole injection layer (HIL) 130, a hole transport layer (HTL) 140, an emission layer (EML) 150, one first electron transport layer (ETL) 161, an electron injection layer (EIL) 180, and a cathode electrode 190. The first electron transport layer (ETL) 161 comprises a compound of formula I and optionally an alkali halide or alkali organic complex. The electron transport layer (ETL) 161 is formed directly on the EML 150.

FIG. 5 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises a substrate 110, a first anode electrode 120, a hole injection layer (HIL) 130, a hole transport layer (HTL) 140, an emission layer (EML) 150, an electron transport layer stack (ETL) 160, an electron injection layer (EIL) 180, and a cathode electrode 190. The electron transport layer (ETL) 160 comprises a first electron transport layer 161 and a second electron transport layer 162, wherein the first electron transport layer is arranged near to the anode (120) and the second electron transport layer is arranged near to the cathode (190). The first and/or the second electron transport layer comprise a compound of formula I and optionally an alkali halide or alkali organic complex.

FIG. 6 is a schematic sectional view of an organic light-emitting diode 100, according to an exemplary embodiment of the present invention. The OLED 100 comprises a substrate 110, a first anode electrode 120, a hole injection layer (HIL) 130, a hole transport layer (HTL) 140, an emission layer (EML) 150, an electron transport layer stack (ETL) 160, an electron injection layer (EIL) 180, and a second cathode electrode 190. The electron transport layer stack (ETL) 160 comprises a first electron transport layer 161, a second electron transport layer 162 and a third electron transport layer 163. The first electron transport layer 161 is formed directly on the emission layer (EML) 150. The first, second and/or third electron transport layer comprise a compound of formula I that is different for each layer, and optionally an alkali halide or alkali organic complex.

A substrate may be further disposed under the anode 120 or on the cathode 190. The substrate may be a substrate that is used in a general organic light emitting diode and may be a glass substrate or a transparent plastic substrate with strong mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance.

The hole injection layer 130 may improve interface properties between ITO as an anode and an organic material used for the hole transport layer 140, and may be applied on a non- planarized ITO and thus may planarize the surface of the ITO. For example, the hole injection layer 130 may include a material having particularly desirable conductivity between a work function of ITO and HOMO of the hole transport layer 140, in order to adjust a difference a work function of ITO as an anode and HOMO of the hole transport layer 140.

When the hole transport region comprises a hole injection layer 130, the hole injection layer may be formed on the anode 120 by any of a variety of methods, for example, vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, or the like.

When hole injection layer is formed using vacuum deposition, vacuum deposition conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed and for example, vacuum deposition may be performed at a temperature of about 100°C to about 500°C, a pressure of about 10 ^"8 torr to about 10 ^"3 torr, and a deposition rate of about 0.01 to about 100 A/sec, but the deposition conditions are not limited thereto.

When the hole injection layer is formed using spin coating, the coating conditions may vary depending on the material that is used to form the hole injection layer, and the desired structure and thermal properties of the hole injection layer to be formed. For example, the coating rate may be in the range of about 2000 rpm to about 5000 rpm, and a temperature at which heat treatment is performed to remove a solvent after coating may be in a range of about 80°C to about 200°C, but the coating conditions are not limited thereto.

Conditions for forming the hole transport layer and the electron blocking layer may be defined based on the above-described formation conditions for the hole injection layer.

A thickness of the hole transport region may be from about 100 A to about 10000 A, for example, about 100 A to about 1000 A. When the hole transport region comprises the hole injection layer and the hole transport layer, a thickness of the hole injection layer may be from about lOOA to about ΙΟ,ΟΟθΑ, for example about 100 A to about 1000 A and a thickness of the hole transport layer may be from about 5θΑ to about 2,ΟΟθΑ, for example about 100 A to about 1500 A. When the thicknesses of the hole transport region, the HIL, and the HTL are within these ranges, satisfactory hole transport characteristics may be obtained without a substantial increase in operating voltage.

A thickness of the emission layer may be about ΙΟθΑ to about ΙΟΟθΑ, for example about 200A to about 600A. When the thickness of the emission layer is within these ranges, the emission layer may have improved emission characteristics without a substantial increase in a operating voltage.

Next, an electron transport region is disposed on the emission layer.

The electron transport region may include at least one of a second electron

transport layer, a first electron transport layer comprising a compound of formula I, and an electron injection layer.

The thickness of the electron transport layer may be from about 20 A to about 1000 A, for example about 30 A to about 300 A. When the thickness of the electron transport layer is within these ranges, the electron transport layer may have improved electron transport auxiliary ability without a substantial increase in operating voltage. .

A thickness of the electron transport layer may be about 100 A to about 1000 A, for example about 150 A to about 500 A. When the thickness of the electron transport layer is within these ranges, the electron transport layer may have satisfactory electron transporting ability without a substantial increase in operating voltage.

In addition, the electron transport region may include an electron injection layer

(EIL) that may facilitate injection of electrons from the anode.

The electron injection layer is disposed on an electron transport layer and may play a role of facilitating an electron injection from a cathode and ultimately improving power efficiency and be formed by using any material used in a related art without a particular limit, for example, LiF, Liq, NaCl, CsF, Li ₂ 0, BaO, Yb and the like.

The electron injection layer may include at least one selected from LiF, NaCl, CsF, Li ₂ 0, and BaO.

A thickness of the EIL may be from about 1 A to about 100 A, or about 3 A to

about 90 A. When the thickness of the electron injection layer is within these ranges, the electron injection layer may have satisfactory electron injection ability without a

substantial increase in operating voltage.

The anode can be disposed on the organic layer. A material for the anode may be a metal, an alloy, or an electrically conductive compound that have a low work function, or a combination thereof. Specific examples of the material for the anode 120 may be lithium

(Li, magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li, calcium (Ca),

magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver (Ag) etc. In order to

manufacture a top-emission light-emitting device, the anode 120 may be formed as a light- transmissive electrode from, for example, indium tin oxide ITO) or indium zinc oxide IZO).

According to another aspect of the invention, a method of manufacturing an organic electroluminescent device is provided, wherein

- on an anode electrode (120) the other layers of hole injection layer (130), hole transport layer (140), optional an electron blocking layer, an emission layer (130), first electron transport layer (161) comprising a compound of formula I, second electron transport layer (162), electron injection layer (180), and a cathode (190), are deposited in that order; or

- the layers are deposited the other way around, starting with the cathode (190).

Organic semiconductor layer

The organic electronic device according to the present invention may comprise an organic semiconductor layer, wherein at least one organic semiconductor layer comprises a compound of formula I.

The organic semiconductor layer of the organic electronic device according to the invention is essentially non-emissive or non-emitting.

The organic semiconductor layer can be an electron transport layer, a hole injection layer, a hole transport layer, an emission layer, an electron blocking layer, a hole blocking layer or an electron injection layer, preferably an electron transport layer or an emission layer, more preferred an electron transport layer.

According to one embodiment, the organic semiconductor layer can be arranged between a photoactive layer and a cathode layer, preferably between an emission layer or light-absorbing layer and the cathode layer, preferably the organic semiconductor layer is an electron transport layer.

According to one embodiment, the organic semiconductor layer may comprise at least one alkali halide or alkali organic complex.

Organic electronic device

An organic electronic device according to the invention comprises an organic

semiconductor layer comprising a compound according to formula I. An organic electronic device according to one embodiment may include a substrate, an anode layer, an organic semiconductor layer comprising a compound of formula 1 and a cathode layer.

An organic electronic device according to one embodiment comprises at least one organic semiconductor layer comprising at least one compound of formula I, at least one anode layer, at least one cathode layer and at least one emission layer, wherein the organic semiconductor layer is preferably arranged between the emission layer and the cathode layer.

An organic light-emitting diode (OLED) according to the invention may include an anode, a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL) comprising at least one compound of formula 1 , and a cathode, which are sequentially stacked on a substrate. In this regard, the HTL, the EML, and the ETL are thin films formed from organic compounds.

An organic electronic device according to one embodiment can be a light emitting device, thin film transistor, a battery, a display device or a photovoltaic cell, and preferably a light emitting device.

According to one embodiment the OLED may have the following layer structure, wherein the layers having the following order:

an anode layer, a hole injection layer, optional a first hole transport layer, optional a second hole transport layer, an emission layer, an electron transport layer comprising a compound of formula 1 according to the invention, an electron injection layer, and a cathode layer.

According to another aspect of the present invention, there is provided a method of manufacturing an organic electronic device, the method using:

- at least one deposition source, preferably two deposition sources and more preferred at least three deposition sources.

The methods for deposition that can be suitable comprise:

- deposition via vacuum thermal evaporation;

- deposition via solution processing, preferably the processing is selected from spin-coating, printing, casting; and/or

- slot-die coating.

According to various embodiments of the present invention, there is provided a method using:

- a first deposition source to release the compound of formula 1 according to the invention, and - a second deposition source to release the alkali halide or alkali organic complex, preferably a lithium halide or lithium organic complex;

the method comprising the steps of forming the electron transport layer stack; whereby for an organic light-emitting diode (OLED):

the first electron transport layer is formed by releasing the compound of formula 1 according to the invention from the first deposition source and the alkali halide or alkali organic complex, preferably a lithium halide or lithium organic complex from the second deposition source.

According to various embodiments of the present invention, the method may further include forming on the anode electrode an emission layer and at least one layer selected from the group consisting of forming a hole injection layer, forming a hole transport layer, or forming a hole blocking layer, between the anode electrode and the first electron transport layer.

According to various embodiments of the present invention, the method may further include the steps for forming an organic light-emitting diode (OLED), wherein

- on a substrate a first anode electrode is formed,

- on the first anode electrode an emission layer is formed,

- on the emission layer an electron transport layer stack is formed, preferably a first electron transport layer is formed on the emission layer and optional a second electron transport layer is formed,

- and finally a cathode electrode is formed,

- optional a hole injection layer, a hole transport layer, and a hole blocking layer, formed in that order between the first anode electrode and the emission layer,

- optional an electron injection layer is formed between the electron transport layer and the cathode electrode.

According to various embodiments of the present invention, the method may further include forming an electron injection layer on a first electron transport layer. However, according to various embodiments of the OLED of the present invention, the OLED may not comprise an electron injection layer.

According to various embodiments, the OLED may have the following layer structure, wherein the layers having the following order:

an anode, first hole transport layer, second hole transport layer, emission layer, optional second electron transport layer, first electron transport layer comprising a compound of formula 1 according to the invention, optional an electron injection layer, and a cathode. According to another aspect of the invention, it is provided an electronic device comprising at least one organic light emitting device according to any embodiment described throughout this application, preferably, the electronic device comprises the organic light emitting diode in one of embodiments described throughout this application. More preferably, the electronic device is a display device.

Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples. Reference will now be made in detail to the exemplary aspects.

Preparation of compounds of formula 1

Compound of formula 1 may be prepared as described below and disclosed by

Huang et al

Chemical Communications (Cambridge, United Kingdom) (2012), 48(77), 9586-9588.

General procedure for Suzuki coupling:

_/0 H

R _? -B.

OH

1-X

CI, Br, I

"Pd" C

Base D

A Water

Solvent

Setup is brought under inert atmosphere. Flask is charged with A, B, C, and D in a counter flow of nitrogen. Water (dist.) is degassed for -30 min with N2 (under stirring). Solvent mixture is added and the mixture is heated with stirring. (TLC control.).

Synthesis of compounds of formula 1:

Synthesis of dimethyl(3 -( 10-(3 -( 1 ,2,2-triphenylvinyl)phenyl)anthracen-9- yl)phenyl)phosphine oxide (Gl)

Reagents and reaction conditions: 9-bromo-10-(3-(l,2,2-triphenylvinyl)phenyl)anthracene (1.0 eq.), dimethyl(3-(4,4,5,5-tetramethyl-l,3,2-dioxaborolan-2-yl)phen yl)phosphine oxide (1.2 eq.), chloro(crotyl)(2-dicyclohexylphosphino-2',6'-dimethoxybiphen yl)palladium(II) (Pd- 172) (0.02 eq.), potassium phosphate (3.0 eq.). 17h at 90°C (450mL, toluene/ethanol/H ₂ 0 6/2/1).

When the reaction was completed according TLC, the reaction was cooled down to room temperature and the aqueous phase was separated. A mixture of water and brine (1/1) was added to the organic phase and the precipitated was then filtered. The solid was dissolved in chloroform and filtered over a pad of florisil (as eluent chloroform was initially used and the polarity was gradually increased to ethylacetate/methanol 24/1). Solvent was partially evaporated and the precipated was filtered. Compound was recrystallized first in DMF and then in acethylacetate. 8.6g (38% yield). MS (ESI): 661 (M+H).

Synthesis of intermediates

Synthesis of 4,4,5,5-tetramethyl-2-(3-(l,2,2-triphenylvinyl)phenyl)-l,3,2 -dioxaborolane, 4,4,5, 5-tetramethyl-2-(4-(l,2,2-triphenylvinyl)phenyl)-l,3,2-dioxa borolane, (2-(3-bromophenyl)- ethene- 1 , 1 ,2-triyl)tribenzene and (2-(4-bromophenyl)ethene- 1 , 1 ,2-triyl)tribenzene according to Chemical Communications, 48(77), 9586-9588; 2012.

Synthesis of 9-bromo-10-(3-(l,2,2-triphenylvinyl)phenyl)anthracene

9-(3-(l,2,2-triphenylvinyl)phenyl)anthracene (1.0 eq.) and NBS (1.2 eq.) were placed in a flask, and dissolved in CHC (600 mL). The resulting solution was heated to 40°C for 4 days, and then cooled down to room temperature. The precipitate was filtered and triturated in chloroform. 31.3g, (76% yield). The compound was directly used in the next step.

Synthesis of 9-(3-(l,2,2-triphenylvinyl)phenyl)anthracene

Reagents and reaction conditions: (2-(3-bromophenyl)ethene-l,l,2-triyl)tribenzene (1.0 eq.), anthracen-9-ylboronic acid (1.7 eq.), tetrakistriphenylphosphine palladium (0) (Pd(PPh ₃ )4) (0.02 eq.) + [l, -Bis(diphenylphosphino)ferrocene]dichloropalladium(II) (Pd(dppf)C12) (0.02 eq.) , potassium carbonate (3.0 eq.), 2-Dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl (0.05 eq.). 7 days at 90°C (525mL, glyme/water 2.5/1.0).

When the reaction was completed according TLC, the reaction was cooled down to room temperature. The precipitate was filtered and washed with water. Solid was dissolved in hot toluene, filtered hot over a pad of silicagel and then solvent was partially evaporated. Solid was filtered, triturated in dichloromethane (filtered hot), and recrystallized in toluene 36. lg, (71% yield). ESI-MS: 508 (M). Preparation of 3,3 ^* "-bis(l ,2,2-triphenylvinyl)-l , Γ :3 ^* , 1":3",1 '"-quaterphenyl (G4)

A flask was flushed with nitrogen and charged with 4,4,5,5-tetramethyl-2-(3-(l,2,2- triphenylvinyl)phenyl)-l,3,2-dioxaborolane (20.0 g, 43.6 mmol) and 3,3'-dibromo-l, -biphenyl (6.5 g, 20.8 mmol), Pd(dppf)C (76 mg, 0.1 mmol). A mixture of deaerated toluene/ethanol (3: 1, 200 mL) and a deaerated solution of K2CO3 (5.7 g, 42.0 mmol) in water (21 mL) were added consecutively and the reaction mixture was heated to 105°C under a nitrogen atmosphere for 3 hours. After cooling down to 0°C, the resulting precipitate was isolated by suction filtration and washed with toluene and hexane. The crude product was then dissolved in dichloromethane (1.2 L) and the organic phase was washed with water (4 x 500 mL). After drying over MgS0 ₄ , the organic phase was filtered through a silica gel pad. After rinsing with additional dichloromethane (1.5 L), the solvent was completely removed under vacuum. The crude solid was then

recrystallized in toluene (170 mL). The precipitate was collected by suction filtration to yield 14.3 g (84%) of a white solid after drying. Final purification was achieved by sublimation. HPLC: 100%.

Preparation of 3,3"-bis(l,2,2-triphenylvinyl)-l, :4',l"-terphenyl (G2)

1400890-61 -0

A flask was flushed with nitrogen and charged with 4,4,5,5-tetramethyl-2-(3-(l,2,2- triphenylvinyl)phenyl)-l,3,2-dioxaborolane (13.8 g, 30.3 mmol) and 1 ,4-dibromobenzene (3.4 g, 14.4 mmol), Pd(dppf)Cl2 (53 mg, 0.07 mmol). A mixture of deaerated toluene/ethanol (3: 1, 140 mL) and a deaerated solution of K2CO3 (4.0 g, 28.8 mmol) in water (14.4 mL) were added consecutively and the reaction mixture was heated to 105°C under a nitrogen atmosphere for 3 hours. After cooling down to room temperature, the resulting precipitate was isolated by suction filtration and washed with toluene and hexane. The crude product was then dissolved in dichloromethane (600 mL) and the organic phase was washed with water (3 x 300 mL). After drying over MgS0 ₄ , the organic phase was filtered through a florisil pad. The solvent was completely removed under vacuum and the crude solid was then recrystallized in toluene (80 mL). The precipitate was collected by suction filtration to yield 7.7 g (72%) of a white solid after drying. Final purification was achieved by sublimation. HPLC: 99.70%.

Preparation of 3,3"-bis(l ,2,2-triphenylvinyl)-5'-(3-(l ,2,2-triphenylvinyl)phenyl)-l , :3', 1"- terphen

A flask was flushed with nitrogen and charged with 4,4,5,5-tetramethyl-2-(3-(l,2,2- triphenylvinyl)phenyl)-l,3,2-dioxaborolane (25.0 g, 54.5 mmol) and 1,3,5-tribromobenzene (5.5 g, 17.3 mmol), Pd(dppf)Cl2 (63 mg, 0.09 mmol). A mixture of deaerated toluene/ethanol (3: 1, 240 mL) and a deaerated solution of K2CO3 (4.8 g, 34.6 mmol) in water (17 mL) were added consecutively and the reaction mixture was heated to 105°C under a nitrogen atmosphere for 21 hours. After cooling down to room temperature, additional toluene was added (250 mL) and the crude reaction was washed with water (4 x 300 mL). After drying over MgS0 ₄ , the organic phase was filtered through a florisil pad. After rinsing with additional toluene (1.0 L), the solvent was completely removed under vacuum and the crude mixture was stirred in ethanol (150 mL) at room temperature. The solid was collected by suction filtration and recrystallized in acetonitrile (300 mL). Pure solid was collected by suction filtration at 70°C to yield 16.3 g (88%) of a white solid after drying. Final purification was achieved by sublimation. HPLC: 99.0%. Preparation of 4',5',6'-triphenyl-3"'-(l ,2,2-triphenylvinyl)-l , Γ:2',1 ":3", Γ''-quaterphenyl

(G6)

A flask was flushed with nitrogen and charged with 4,4,5,5-tetramethyl-2-(3',4',5'- triphenyl-[l, :2',l"-terphenyl]-3-yl)-l,3,2-dioxaborolane (20.0 g, 34.2 mmol) and (2-(3- bromophenyl)ethene-l,l,2-triyl)tribenzene (12.8 g, 31.1 mmol), Pd(dppf)Cb (113 mg, 0.16 mmol). A mixture of deaerated toluene/ethanol (3: 1, 240 mL) and a deaerated solution of K2CO3 (4.8 g, 34.6 mmol) in water (17 mL) were added consecutively and the reaction mixture was heated to 105°C under a nitrogen atmosphere for 5 hours. After cooling down to room

temperature, additional toluene was added (250 mL) and the crude reaction was washed with water (4 x 300 mL). After drying over MgS0 ₄ , the organic phase was filtered through a fiorisil pad. After rinsing with additional toluene (2.0 L), the solvent was partially removed under vacuum and hexane (300 mL) was added to induce precipitation. The crude mixture was collected by suction filtration and recrystallized in ethylacetate (150 mL) to yield 16.9 g (69%) of a white solid after drying. Final purification was achieved by sublimation. HPLC: 99.9%.

Pre aration of 3,3"-bis(l,2,2-triphenylvinyl)-l, :3',l"-terphenyl (G3)

1400890-61-0

A flask was flushed with nitrogen and charged with 4,4,5,5-tetramethyl-2-(3-(l,2,2- triphenylvinyl)phenyl)-l,3,2-dioxaborolane (20.0 g, 44.0 mmol) and 1,3-dibromobenzene (4.9 g, 20.8 mmol), Pd(dppf)Cl2 (76 mg, 0.10 mmol). A mixture of deaerated toluene/ethanol (3: 1, 200 mL) and a deaerated solution of K2CO3 (5.7 g, 42.0 mmol) in water (21 mL) were added consecutively and the reaction mixture was heated to 105°C under a nitrogen atmosphere for 21 hours. After cooling down to room temperature, additional toluene was added (300 mL) and the crude reaction was washed with water (4 x 300 mL). After drying over MgS0 ₄ , the organic phase was filtered through a florisil pad. After rinsing with additional toluene (1.0 L), the solvent was completely removed. The crude mixture was recrystallized in acetonitrile. The precipitate was collected by suction filtration at 60 °C. Finally, it was stirred in ethanol (180 mL). The precipitate was collected by suction filtration to yield 14.1 g (92%) of a white solid after drying. Final purification was achieved by sublimation. HPLC: 99.9%.

General procedure for fabrication of organic electronic devices

In general organic electronic devices may be organic light-emitting diodes (OLEDs), organic photovoltaic cells (OSCs), organic field-effect transistors (OFETs) or organic light emitting transistors (OLETs).

Any functional layer in the organic electronic device may comprise a compound of formula 1 or may consist of a compound of formula 1.

An OLED may be composed of individual functional layers to form a top-emission OLED which emits light through the top electrode. Herein, the sequence of the individual functional layers may be as follows wherein contact interfaces between the individual layers are shown as " / ": non-transparent anode layer (bottom electrode) / hole injection layer / hole transport layer / electron blocking layer / emission layer / hole blocking layer / electron transport layer / electron injection layer / transparent cathode layer (top electrode). Each layer may in itself be constituted by several sub-layers.

An OLED may be composed of individual functional layers to form a bottom-emission OLED which emits light through the bottom electrode. Herein, the sequence of the individual functional layers may be as follows wherein contact interfaces between the individual layers are shown as " / ": transparent anode layer (bottom electrode) / hole injection layer / hole transport layer / electron blocking layer / emission layer / hole blocking layer / electron transport layer / electron injection layer / non-transparent cathode layer (top electrode). Each layer may in itself be constituted by several sub-layers. Top-emission OLED devices were prepared to demonstrate the technical benefit utilizing the compounds of formula 1 in an organic electronic device.

Fabrication of top emission devices

For top emission devices in Table 3 and 4, a glass substrate was cut to a size of 50 mm x 50 mm x 0.7 mm, ultrasonically cleaned with isopropyl alcohol for 5 minutes and then with pure water for 5 minutes, and cleaned again with UV ozone for 30 minutes, to prepare a first electrode. 100 nm Ag were deposited at a pressure of 10 ^"5 to 10 ^"7 mbar to form the anode. Then, 92 vol.-% Biphenyl-4-yl(9,9-diphenyl-9H-fluoren-2-yl)-[4-(9-phenyl-9H- carbazol-3-yl)phenyl]-amine (CAS 1242056-42-3) with 8 vol.-% 4,4',4"-((lE,rE,r ^, E)-cyclopropane-l,2,3- triylidenetris(cyanomethanylylidene))tris(2,3,5,6-tetrafluor obenzonitrile) was vacuum deposited on the Ag electrode, to form a HIL having a thickness of 10 nm. Then, Biphenyl-4-yl(9,9- diphenyl-9H-fluoren-2-yl)-[4-(9-phenyl-9H-carbazol-3-yl)phen yl]-amine (CAS 1242056-42-3) was vacuum deposited on the HIL, to form a HTL having a thickness of 118 nm. Then, N,N-bis(4- (dibenzo[b,d]furan-4-yl)phenyl)-[l,r:4*,r ^* -terphenyl]-4-amine (CAS 1198399-61-9) was vacuum deposited on the HTL, to form an electron blocking layer (EBL) having a thickness of 5 nm.

97 vol.-% H09 (Sun Fine Chemicals) as EML host and 3 vol.-% BD200 (Sun Fine

Chemicals) as fluorescent blue dopant were co-deposited on the EBL, to form a blue-emitting EML with a thickness of 20 nm.

Then, the hole blocking layer is formed with a thickness of 5 nm by depositing a mixture 2,4-diphenyl-6-(3 '-(triphenylen-2-yl)- [ 1 , 1 '-biphenyl] -3 -yl)- 1 ,3 ,5 -triazine (CAS 1638271-85-8) and 9-([ 1 , 1 '-biphenyl] -3-yl)-9'-([ 1 , 1 ^* -biphenyl]-4-yl)-9H,9 ^* H-3 ,3 ^* -bicarbazole (CAS 1643479-47-3) in a volume ratio of 30:70 on the emission layer for inventive example 7. For inventive example 10 to 12, the hole blocking layer is formed with a thickness of 5 nm by co-depositing compound ET-1 (diphenyl(3 '-(10-phenylanthracen-9-yl)- [ 1 , 1 '-biphenyl] -4-yl)phosphine oxide

(WO2017178392A1)) and compound of formula I in a volume ratio of 40:60 on the emission layer, see Table 4.

Then, the electron transporting layer is formed on the hole blocking layer . The electron transport layer of inventive example 7 comprises 70 wt.-% of compound of formula 1 (or of the comparative compound) and 30 wt.-% of Lithium tetra(lH-pyrazol-l-yl)borate (CAS 14728-62- 2). The electron transport layer of inventive example 10 to 12 comprises 75 wt.-% of compound ET-1 and 25 wt.-% of Lithium tetra(lH-pyrazol-l-yl)borate (CAS 14728-62-2). Then, for top emission devices the electron injection layer is formed on the electron transporting layer by deposing Yb with a thickness of 2 nm. Ag is evaporated at a rate of 0.01 to 1 A/s at 10 ^"7 mbar to form a cathode with a thickness of 11 nm. A cap layer of Biphenyl-4-yl(9,9- diphenyl-9H-fluoren-2-yl)-[4-(9-phenyl-9H-carbazol-3-yl)phen yl]-amine is formed on the cathode with a thickness of 75 nm.

The OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.

To assess the performance of the inventive examples compared to the existing art, the light output of the top emission OLEDs is measured under ambient conditions (20°C). Current voltage measurements are performed using a Keithley 2400 sourcemeter, and recorded in V. At 10 mA/cm ² for top emission devices, a spectrometer CAS 140 CT from Instrument Systems, which has been calibrated by Deutsche Akkreditierungsstelle (DAkkS), is used for measurement of CIE coordinates and brightness in Candela. The current efficiency Ceff is determined at 10 mA/cm ² in cd/A.

In top emission devices, the emission is forward directed, non-Lambertian and also highly dependent on the micro-cavity. Therefore, the external quantum efficiency (EQE) and power efficiency in lm/W will be higher compared to bottom emission devices.

Compounds used

Korea

Melting point

The melting point (Tm) is determined as peak temperatures from the DSC curves of the above TGA-DSC measurement or from separate DSC measurements (Mettler Toledo DSC822e, heating of samples from room temperature to completeness of melting with heating rate 10 K/min under a stream of pure nitrogen. Sample amounts of 4 to 6 mg are placed in a 40 Mettler Toledo aluminum pan with lid, a <1 mm hole is pierced into the lid).

Glass transition temperature

The glass transition temperature (Tg) is measured under nitrogen and using a heating rate of 10 K per min in a Mettler Toledo DSC 822e differential scanning calorimeter as described in DIN EN ISO 11357, published in March 2010.

Rate onset Temperature

The rate onset temperature (TRO) for transfer into the gas phase is determined by loading 100 mg compound into a VTE source. As VTE source a point source for organic materials is used as supplied by Kurt J. Lesker Company (www.lesker.com) or CreaPhys GmbH

(http://www.creaphys.com). The VTE (vacuum thermal evaporation) source temperature is determined through a thermocouple in direct contact with the compound in the VTE source.

The VTE source is heated at a constant rate of 15 K/min at a pressure of 10 ^"7 to 10 ^"8 mbar in the vacuum chamber and the temperature inside the source measured with a thermocouple. Evaporation of the compound is detected with a QCM detector which detects deposition of the compound on the quartz crystal of the detector. The deposition rate on the quartz crystal is measured in Angstrom per second. To determine the rate onset temperature, the deposition rate on a logarithmic scale is plotted against the VTE source temperature. The rate onset is the

temperature at which noticeable deposition on the QCM detector occurs (defined as a rate of 0.02A/S. The VTE source is heated and cooled three time and only results from the second and third run are used to determine the rate onset temperature. The rate onset temperature is an indirect measure of the volatility of a compound. The higher the rate onset temperature the lower is the volatility of a compound.

Technical Effect of the invention

In summary, organic electronic devices comprising compounds with formula 1 inherent to their molecular structure have higher current efficiency. The glass transition temperature and rate onset temperature are within the range acceptable for mass production of organic semiconductor layers.

Table 1 : Structural formulae, glass transition temperature, melting temperature, rate onset temperature of comparative compounds.

Table 1

Name Formula Tg Tm TRO

[°C] [°C] [°C]

Comparative Comparative- 1 15 308 198 compound 3 3

Table 2: Structural formulae, glass transition temperature, melting temperature, rate onset temperature of inventive compounds.

Table 2

In Table 1 are shown glass transition temperatures, melting temperatures, rate onset temperatures of comparative compounds.

In Table 2 are shown glass transition temperatures, melting temperatures, rate onset temperatures of compounds of formula 1.

Table 3 : Performance data of top emission OLED devices comprising an electron transport layer, which comprises the compounds of formula I a comparative compounds and an alkali organic complex. The inventive examples show increased cd/A efficiencies

Table 3

Table 4. Performance data of top emission OLED devices comprising a hole blocking layer, which comprises the compounds of formula I. Th inventive example show increased cd/A efficiencies

While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Therefore, the aforementioned embodiments should be understood to be exemplary but not limiting the present invention in any way.