Title:
ORGANIC THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/114061
Kind Code:
A1
Abstract:
Provided is an organic thin-film transistor which is provided, as a gate insulating film, with an insulating layer that is formed of an organic-inorganic composite thin film containing (a) a condensation product of an organosilicon compound represented by formula (I) (wherein R represents an organic group that has a carbon atom directly bonded to Si; X represents a hydroxyl group or a hydrolyzable group; n represents 1 or 2; when n is 2, the R moieties may be the same as or different from each other; and when (4-n) is 2 or more, the X moieties may be the same as or different from each other) and (b) a cured product of an electromagnetic ray-curable compound. RnSix4-n (I)
Inventors:
TAKEYA JUNICHI (JP)
KUMAZAWA KAZUHISA (JP)
IWASA JUNJI (JP)
KUMAZAWA KAZUHISA (JP)
IWASA JUNJI (JP)
Application Number:
PCT/JP2015/085209
Publication Date:
July 21, 2016
Filing Date:
December 16, 2015
Export Citation:
Assignee:
NIPPON SODA CO (JP)
International Classes:
H01L29/786; C08L83/04; H01L51/05; H01L51/30
Domestic Patent References:
| WO2014010217A1 | 2014-01-16 | |||
| WO2009116373A1 | 2009-09-24 |
Foreign References:
| JP2008019285A | 2008-01-31 | |||
| JP2012109542A | 2012-06-07 | |||
| JP2010165930A | 2010-07-29 | |||
| JPH0450262A | 1992-02-19 | |||
| JP2004161876A | 2004-06-10 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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