Title:
ORGANOCOPPER PRECURSORS FOR CHEMICAL VAPOR DEPOSITION
Document Type and Number:
WIPO Patent Application WO2000008225
Kind Code:
A3
Abstract:
This invention provides organocopper (I) compounds containing an acetoacetate derivative and an appropriate neutral ligand to form (R<6>COOCR<5>COR<4>)Cu<+1>{L}x, where x is 1, 2 or 3 and L is a neutral ligand which is a phosphine, phosphite or an unsaturated hydrocarbon. Both R<4> and R<6> are each independently C1-C9 alkyl or aryl and R<5> is H, F, C1-C9 alkyl or aryl. The advantages of using these organocopper (I) compounds as CVD precursors are high thermal stability, volatility and ability to deposit high-quality copper films using CVD techniques. These precursors were isolated as distillable liquids or low melting solids and are vaporized without decomposition to deposit copper selectively on a metallic or electrically conductive surfaces at low temperatures.
Inventors:
CHOI HYUNGSOO (US)
Application Number:
PCT/KR1999/000438
Publication Date:
May 11, 2000
Filing Date:
August 06, 1999
Export Citation:
Assignee:
CHOI HYUNGSOO (US)
International Classes:
C07F1/00; C07C49/92; C07F1/08; C07F7/08; C07F9/142; C23C16/18; H01L21/28; H01L21/285; (IPC1-7): C23C16/18
Foreign References:
| US5767301A | 1998-06-16 | |||
| US5098516A | 1992-03-24 |
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