Title:
OVERHEAT DETECTION DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/086042
Kind Code:
A1
Abstract:
The present invention suppresses the reduction of temperature detection accuracy. This overheat detection device (1) is provided with a temperature sensor unit (1a), a detection unit (1b), and a filter unit (1c). The temperature sensor unit (1a) senses a temperature, and outputs a temperature sensing signal (Temp). The detection unit (1b) has a first threshold for distinguishing that the temperature is a normal state, and a second threshold for distinguishing that the temperature is an overheating state, and operates by using an internal ground as a point of reference. The detection unit (1b), in accordance with the positional relationship of the sensing level of the temperature sensing signal (Temp), with respect to the first threshold and the second threshold, recognizes the normal state or the overheating state and outputs a state signal (s0). The filter unit (1c) carries out filtering processing of the oscillation of the state signal (s0) accompanying the potential fluctuation of the internal ground.
Inventors:
IWATA HIDEKI (JP)
Application Number:
PCT/JP2016/079467
Publication Date:
May 26, 2017
Filing Date:
October 04, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/822; H01L27/04; H03K17/08
Foreign References:
| JP2008058298A | 2008-03-13 | |||
| JPH07115354A | 1995-05-02 | |||
| JP2000307403A | 2000-11-02 | |||
| JP2006302951A | 2006-11-02 | |||
| JP2006194885A | 2006-07-27 | |||
| JP2011071174A | 2011-04-07 |
Attorney, Agent or Firm:
HATTORI, Kiyoshi (JP)
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