Title:
OXIDE-BONDED WAFER PAIR SEPARATION USING LASER DEBONDING
Document Type and Number:
WIPO Patent Application WO/2022/111141
Kind Code:
A1
Abstract:
A method of fabricating a semiconductor structure includes forming a scissionable layer that is able to absorb infrared (IR) radiation, below a first carrier wafer. A first hard-dielectric layer is formed below the scissionable layer. A second hard-dielectric layer is formed on a top surface of a semiconductor wafer. The first dielectric layer is bonded with the second dielectric layer. Connectors on a bottom portion of the semiconductor wafer are formed to provide an electric connection to the semiconductor wafer. A second carrier wafer is connected to the connectors on the bottom portion of the semiconductor wafer. The first carrier wafer is separated from the semiconductor wafer by degrading the scissionable layer with an IR, by passing the IR through the first carrier wafer. A back end of line (BEOL) wiring passing from a top surface of the semiconductor wafer through the first and second dielectric layers is provided.
Inventors:
FAROOQ MUKTA GHATE (US)
MCHERRON DALE CURTIS (US)
SKORDAS SPYRIDON (US)
MCHERRON DALE CURTIS (US)
SKORDAS SPYRIDON (US)
Application Number:
PCT/CN2021/124902
Publication Date:
June 02, 2022
Filing Date:
October 20, 2021
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L21/58
Foreign References:
| TW201110248A | 2011-03-16 | |||
| CN107275197A | 2017-10-20 | |||
| CN104045052A | 2014-09-17 |
Attorney, Agent or Firm:
KING & WOOD MALLESONS (CN)
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