Title:
OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, SPUTTERING TARGET, AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2011/126093
Kind Code:
A1
Abstract:
Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.
Inventors:
MORITA SHINYA
KUGIMIYA TOSHIHIRO
MAEDA TAKEAKI
YASUNO SATOSHI
TERAO YASUAKI
MIKI AYA
KUGIMIYA TOSHIHIRO
MAEDA TAKEAKI
YASUNO SATOSHI
TERAO YASUAKI
MIKI AYA
Application Number:
PCT/JP2011/058847
Publication Date:
October 13, 2011
Filing Date:
April 07, 2011
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
MORITA SHINYA
KUGIMIYA TOSHIHIRO
MAEDA TAKEAKI
YASUNO SATOSHI
TERAO YASUAKI
MIKI AYA
MORITA SHINYA
KUGIMIYA TOSHIHIRO
MAEDA TAKEAKI
YASUNO SATOSHI
TERAO YASUAKI
MIKI AYA
International Classes:
H01L29/786; H01L21/363
Domestic Patent References:
| WO2010023889A1 | 2010-03-04 | |||
| WO2009093625A1 | 2009-07-30 |
Foreign References:
| JP2009253204A | 2009-10-29 | |||
| JP2010030824A | 2010-02-12 |
Attorney, Agent or Firm:
OGURI Shohei et al. (JP)
Shohei Oguri (JP)
Shohei Oguri (JP)
Download PDF:
Claims: