Title:
OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/024501
Kind Code:
A1
Abstract:
Disclosed are: an oxide semiconductor which enables the formation of a TFT having excellent electrical properties and excellent process resistance; a TFT having a channel layer formed using the oxide semiconductor; and a display device equipped with the TFT. The oxide semiconductor comprises an oxide semiconductor for a TFT. The oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc) and O (oxygen) as the constituent atoms, wherein the atom ratio of Zn contained in the oxide semiconductor is a value fulfilling the following formula: 0.01 ≤ Zn/(In+Zn) ≤ 0.22.
Inventors:
OTA YOSHIFUMI
NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
HARA TAKESHI
AITA TETSUYA
SUZUKI MASAHIKO
NAKAGAWA OKIFUMI
NAKAGAWA KAZUO
MIZUNO YUUJI
TAKEI MICHIKO
HARUMOTO YOSHIYUKI
NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
HARA TAKESHI
AITA TETSUYA
SUZUKI MASAHIKO
NAKAGAWA OKIFUMI
NAKAGAWA KAZUO
MIZUNO YUUJI
TAKEI MICHIKO
HARUMOTO YOSHIYUKI
Application Number:
PCT/JP2010/055582
Publication Date:
March 03, 2011
Filing Date:
March 29, 2010
Export Citation:
Assignee:
SHARP KK (JP)
OTA YOSHIFUMI
NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
HARA TAKESHI
AITA TETSUYA
SUZUKI MASAHIKO
NAKAGAWA OKIFUMI
NAKAGAWA KAZUO
MIZUNO YUUJI
TAKEI MICHIKO
HARUMOTO YOSHIYUKI
OTA YOSHIFUMI
NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
HARA TAKESHI
AITA TETSUYA
SUZUKI MASAHIKO
NAKAGAWA OKIFUMI
NAKAGAWA KAZUO
MIZUNO YUUJI
TAKEI MICHIKO
HARUMOTO YOSHIYUKI
International Classes:
H01L29/786; G02F1/1368
Domestic Patent References:
| WO2009093625A1 | 2009-07-30 |
Attorney, Agent or Firm:
YASUTOMI & Associates (JP)
Patent business corporation Yasutomi international patent firm (JP)
Patent business corporation Yasutomi international patent firm (JP)
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